Dependence of oxygen precipitate size and strain on external stress at annealing of Cz-Si

被引：4
|
作者：
Antonova, IV
Misiuk, A
Bak-Misiuk, J
Popov, VP
Plotnikov, AE
Surma, B
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
[2] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
[3] Inst Phys, PL-02668 Warsaw, Poland
[4] Inst Elect Mat Technol, PL-01919 Warsaw, Poland
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 1999年 / 286卷 / 1-2期
关键词：
hydrostatic pressure; nucleation; oxygen precipitates; silicon;
D O I：
10.1016/S0925-8388(98)01013-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The size of oxygen precipitates (OP) and the strain at the OP/matrix interface as a function of enhanced pressure during annealing of Ct-Si were investigated. High pressure treatments led to an increase in the strain at the OP/matrix interface in comparison with the effect of annealing at atmospheric pressure. This high strain is suggested to be caused by acceleration of the gettering process at enhanced pressure. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：241 / 245
页数：5
相关论文
共 32 条
  • [1] Stress-induced oxygen precipitation in Cz-Si
    Misiuk, A
    Surma, B
    Hartwig, J
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 36 (1-3): : 30 - 32
  • [2] Formation of vacancy and oxygen containing complexes in Cz-Si by rapid thermal annealing
    Akhmetov, V.
    Kissinger, G.
    von Ammon, W.
    PHYSICA B-CONDENSED MATTER, 2009, 404 (23-24) : 4572 - 4575
  • [3] A study of oxygen dislocation interactions in CZ-Si
    Senkader, S
    Jurkschat, K
    Wilshaw, PR
    Falster, RJ
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 73 (1-3): : 111 - 115
  • [4] Influence of neutron irradiation on stress-induced oxygen precipitation in Cz-Si
    Bak-Misiuk, J
    Misiuk, A
    Surma, B
    Shalimov, A
    Londos, CA
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, 2005, 108-109 : 169 - 174
  • [5] Dissolution of Oxygen Precipitate Nuclei in n-Type CZ-Si Wafers to Improve Their Material Quality: Experimental Results
    Sopori, Bhushan
    Basnyat, Prakash
    Devayajanam, Srinivas
    Tan, Teh
    Upadhyaya, Ajay
    Tate, Keith
    Rohatgi, Ajeet
    Xu, Han
    IEEE JOURNAL OF PHOTOVOLTAICS, 2017, 7 (01): : 97 - 103
  • [6] Silicon Dioxide as a Boundary for Oxygen Outdiffusion from CZ-Si
    Barcz, Adam
    DIFFUSION IN SOLIDS AND LIQUIDS V, PTS 1 AND 2, 2010, 297-301 : 688 - 693
  • [7] Stress-dependent transformation of interstitial oxygen in processed Ge-doped Cz-Si
    Misiuk, A.
    Londos, C. A.
    Bak-Misiuk, J.
    Yang, Deren
    Jung, W.
    Prujszczyk, M.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 253 (1-2): : 205 - 209
  • [8] Effect of annealing under enhanced hydrostatic pressure on the. microstructure of Cz-Si:H, He
    Misiuk, A
    Shalimov, A
    Surma, B
    Bak-Misiuk, J
    Wnuk, A
    JOURNAL OF ALLOYS AND COMPOUNDS, 2005, 401 (1-2) : 205 - 211
  • [9] Infrared studies of the oxygen precipitation in fast neutron irradiated CZ-Si
    Ma, QY
    Li, YX
    Yang, S
    Liu, HY
    Hao, QY
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 122 (03): : 218 - 221
  • [10] Simulation of oxygen precipitation in CZ-Si crystal during the pulling process
    Nakamura, K
    Saishuoji, T
    Kubota, T
    Tanimura, T
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 36 (1-3): : 22 - 25
1234