Open air annealing effect on the electrical and optical properties of tin doped ZnO nanostructure

被引：27
作者：
Shelke, Vrushali [1 ]
Bhole, M. P. [1 ]
Patil, D. S. [1 ]
机构：
[1] N Maharashtra Univ, Dept Elect, Jalgaon 425001, Maharashtra, India
来源：
SOLID STATE SCIENCES | 2012年 / 14卷 / 06期
关键词：
Optical materials; Sol-gel growth; Electrical properties; Optical properties; Nanostructures; THIN-FILMS; AL FILMS; TEMPERATURE; ANODE;
D O I：
10.1016/j.solidstatesciences.2012.03.023
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
Transparent conducting undoped and tin doped ZnO multilayer films were deposited by sol-gel method. Effect of open air annealing on different parameters like grain size, carrier density, band gap, resistivity, refractive index and extinction coefficient were investigated. Films were deposited on glass and silicon substrate by keeping doping concentration 4 at%. It was observed that tin doping reduces resistivity from 194.6 Omega cm to 3.11 Omega cm. Optical transmission spectra exhibit transmittance above 88% in visible range. Maximum carrier density of 11.9 x 10(18) cm(-3) and band gap of 3.24 eV was estimated at 375 degrees C. Scanning Electron Microscopy showed homogenous worm like morphology. Atomic force microscopy revealed pyramid shaped nanostructure of tin doped ZnO. (C) 2012 Elsevier Masson SAS. All rights reserved.
引用
收藏
页码：705 / 710
页数：6
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