The Study of p-n and Schottky Junction for Magnetodiode

被引：3
|
作者：
Phetchakul, Toempong [1 ]
Luanatikomkul, Wittaya [1 ]
Leepattarapongpan, Chana [2 ]
Chaowicharat, Ekalak [2 ]
Pengpad, Putapon [2 ]
Poyai, Amporn [2 ]
机构：
[1] King Mongkuts Inst Technol, Fac Engn, Dept Elect, Bangkok, Thailand
[2] Natl Elect & Comp Technol Ctr, Thai Microelect Ctr, Chachoengsao, Thailand
来源：
APPLIED MATERIALS AND ELECTRONICS ENGINEERING, PTS 1-2 | 2012年 / 378-379卷
关键词：
Sentaurus TCAD; Magnetodiode; p-n junction; Schottky junction;
D O I：
10.4028/www.scientific.net/AMR.378-379.663
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.
引用
收藏
页码：663 / +
页数：2
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