Piezotronic Transistor Based on Topological Insulators

被引：61

作者：

Hu, Gongwei ^{[1
]}

Zhang, Yan ^{[1
,2
]}

Li, Lijie ^{[3
]}

Wang, Zhong Lin ^{[2
,4
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Phys Elect, Sch Phys, Chengdu 610054, Sichuan, Peoples R China

[2] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Natl Ctr Nanosci & Technol NCNST, Beijing 100083, Peoples R China

[3] Swansea Univ, Coll Engn, Multidisciplinary Nanotechnol Ctr, Swansea SA1 8EN, W Glam, Wales

[4] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

来源：

ACS NANO | 2018年 / 12卷 / 01期

基金：

“创新英国”项目; 英国工程与自然科学研究理事会;

关键词：

piezotronics; topological insulator; quantum state; piezotronic switch; piezotronic logical unit; PIEZO-PHOTOTRONICS; STRAIN; LOGIC; PIEZOELECTRICITY; LUMINESCENCE; TRANSITION; PRESSURE; DEVICES; MOS2;

D O I：

10.1021/acsnano.7b07996

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Piezotronics and piezophototronics are emerging fields by coupling piezoelectric, semiconductor, and photon excitation effects for achieving high-performance strain-gated sensors, LEDs, and solar cells. The built-in piezoelectric potential effectively controls carrier transport characteristics in piezoelectric semiconductor materials, such as ZnO, GaN, InN, CdS, and monolayer MoS2. In this paper, a topological insulator piezotronic transistor is investigated theoretically based on a HgTe/CdTe quantum well. The conductance, ON/OFF ratio, and density of states have been studied at various strains for the topological insulator piezotronic transistor. The ON/OFF ratio of conductance can reach up to 1010 with applied strain. The properties of the topological insulator are modulated by piezoelectric potential; which is the result of the piezotronic effect on quantum states. The principle provides a method for developing high-performance piezotronic devices based on a topological insulator.

引用

页码：779 / 785

页数：7

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