Fabrication of a graphene field effect transistor array on microchannels for ethanol sensing

被引：29

作者：

Chen, Bangdao ^{[1
]}

Liu, Hongzhong ^{[1
]}

Li, Xin ^{[2
]}

Lu, Congxiang ^{[2
]}

Ding, Yucheng ^{[1
]}

Lu, Bingheng ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, State Key Lab Mfg Syst Engn, Xian 710049, Peoples R China

[2] Xi An Jiao Tong Univ, Dept Microelect, Xian 710049, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2012年 / 258卷 / 06期

基金：

中国国家自然科学基金;

关键词：

Narrow walls; Graphene; FET; MEMS; Sensor;

D O I：

10.1016/j.apsusc.2011.05.101

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A new approach to the fabrication of back-gated graphene FET (field effect transistor) arrays on microchannels was investigated. Narrow walls fabricated on a substrate with SU-8 (a negative photoresist), with top metal electrodes were pressed onto another silicon/SiO2 substrate with predeposited graphene pieces such that the electrodes came into contact with graphene pieces and formed the source and drain contact. The SU-8 narrow walls with the top metal layer were fabricated by the conventional lift-off process. The graphene pieces were reduced chemically from graphite oxide. The I-DS changed immediately by more than 17% when the device was exposed to an ethanol atmosphere. The current recovered very well after the ethanol gas was pumped out. The SU-8 microchannels served as gas flow passages that helped the ethanol vapor reach the sensitive region of the device: the graphene channel. This work provides a convenient way of constructing back-gated graphene FETs for sensing applications. This method could potentially be scaled up for mass production. (C) 2011 Elsevier B. V. All rights reserved.

引用

页码：1971 / 1975

页数：5

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