Room Temperature Fabrication of High Quality ZrO2 Dielectric Films for High Performance Flexible Organic Transistor Applications

被引：17

作者：

Gong, Yanfen ^{[1
,2
]}

Zhao, Kai ^{[1
,2
]}

Yan, Longsen ^{[1
,2
]}

Wei, Weiyao ^{[1
,2
]}

Yang, Cheng ^{[1
,2
]}

Ning, Honglong ^{[3
]}

Wu, Sujuan ^{[1
,2
]}

Gao, Jinwei ^{[1
,2
]}

Zhou, Guofu ^{[4
,5
]}

Lu, Xubing ^{[1
,2
]}

Liu, J. -M. ^{[6
]}

机构：

[1] South China Normal Univ, Inst Adv Mat, South China Acad Adv Optoelect, Guangzhou 510006, Guangdong, Peoples R China

[2] South China Normal Univ, Guangdong Prov Lab Quantum Engn & Quantum Mat, Guangzhou 510006, Guangdong, Peoples R China

[3] South China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China

[4] South China Normal Univ, South China Acad Adv Optoelect, Elect Paper Displays Inst, Guangzhou 510006, Guangdong, Peoples R China

[5] South China Normal Univ, South China Acad Adv Optoelect, Guangdong Prov Key Lab Opt Informat Mat & Technol, Guangzhou 510006, Guangdong, Peoples R China

[6] Nanjing Univ, Innovat Ctr Adv Microstruct, Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 02期

基金：

中国国家自然科学基金;

关键词：

OTFT; room temperature fabrication; UV treatment; ZrO2; films; OXIDE GATE DIELECTRICS; ELECTRONIC-STRUCTURE; STACK;

D O I：

10.1109/LED.2017.2783945

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By using low-cost solution process and ultraviolet (UV) irradiation, we successfully fabricated high-quality ZrO2 films at room temperature. The ZrO2 films obtained with 1-h UV curing showed a very low leakage current (1.7 x 10(-6) A/cm(2) at -3 V), a high breakdown electric field 7.9 MV/cm, a high bandgap (6.13 eV), and a high dielectric constant (17.8). The organic thin-film transistor made by solution-processed ZrO2 gate dielectric shows a greatly reduced operation voltage of 4 V, and a high drain current on/off ratio of 3.1 x 106. Furthermore, we also clarified the electronic structures of ZrO2 films with UV curedor thermal annealing. This letter demonstrated that solution-processable ZrO2 film is promising for applications in future low power consumption electronic devices.

引用

页码：280 / 283

页数：4

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