Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates

被引：25
作者：
Albert, S. [1 ,2 ]
Bengoechea-Encabo, A. [1 ,2 ]
Lefebvre, P. [1 ,2 ,3 ]
Sanchez-Garcia, M. A. [1 ,2 ]
Calleja, E. [1 ,2 ]
Jahn, U. [4 ]
Trampert, A. [4 ]
机构：
[1] Univ Politecn Madrid, ISOM, E-28040 Madrid, Spain
[2] Univ Politecn Madrid, Dept Ingn Elect, ETSI Telecomunicac, E-28040 Madrid, Spain
[3] Univ Montpellier 2, F-34095 Montpellier 5, France
[4] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
来源：
APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 13期
关键词：
gallium compounds; III-V semiconductors; indium compounds; molecular beam epitaxial growth; nanofabrication; nanostructured materials; photoluminescence; plasma materials processing; scanning electron microscopy; self-assembly; semiconductor growth; wide band gap semiconductors; GAN NANOCOLUMNS; PHOTOLUMINESCENCE; STRAIN;
D O I：
10.1063/1.3644986
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This work studies the effect of the growth temperature on the morphology and emission characteristics of self-assembled InGaN nanocolumns grown by plasma assisted molecular beam epitaxy. Morphology changes are assessed by scanning electron microscopy, while emission is measured by photoluminescence. Within the growth temperature range of 750 to 650 degrees C, an increase in In incorporation for decreasing temperature is observed. This effect allows tailoring the InGaN nanocolumns emission line shape by using temperature gradients during growth. Depending on the gradient rate, span, and sign, broad emission line shapes are obtained, covering the yellow to green range, even yielding white emission. (C) 2011 American Institute of Physics. [doi:10.1063/1.3644986]
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页数：3
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