The strain model of misfit dislocations at Ge/Si hetero-interface

被引：5
|
作者：
Zhao, Chunwang [1 ,2 ]
Dong, Zhaoshi [2 ,4 ]
Shen, Jiajie [2 ,3 ]
机构：
[1] Foshan Univ, Sch Mat Sci & Hydrogen Energy, Foshan 528000, Peoples R China
[2] Shanghai Maritime Univ, Coll Arts & Sci, Shanghai 201306, Peoples R China
[3] Chinese Acad Sci, Key Lab Interfacial Phys & Technol, Shanghai 201800, Peoples R China
[4] Anqing Normal Univ, Sch Elect Engn & Intelligent Mfg, Anqing 246133, Peoples R China
来源：
VACUUM | 2022年 / 196卷
基金：
中国国家自然科学基金;
关键词：
Misfit dislocation; Strain; Hetero-interface; Transmission electron microscopy; Geometric phase analysis; PEIERLS-NABARRO MODEL; MECHANISM; FIELDS;
D O I：
10.1016/j.vacuum.2021.110711
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The misfit dislocation at Ge/Si hetero-interface was quantitatively investigated by a combination of highresolution transmission electron microscopy and geometric phase analysis. To describe the strain field around the misfit dislocation core at Ge/Si hetero-interface more accurately, a modified Foreman model is proposed by introducing a new half width of the misfit dislocation core into the original Foreman model. The experimentally measured strain field around the misfit dislocation core at Ge/Si hetero-interface was compared with the theoretical strain field calculated by the modified Foreman model. It is demonstrated that the modified Foreman model with the variable factor a = 2 is a perfect strain model of misfit dislocation at Ge/Si hetero-interface.
引用
收藏
页数：5
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