The strain model of misfit dislocations at Ge/Si hetero-interface

被引：5

作者：

Zhao, Chunwang ^{[1
,2
]}

Dong, Zhaoshi ^{[2
,4
]}

Shen, Jiajie ^{[2
,3
]}

机构：

[1] Foshan Univ, Sch Mat Sci & Hydrogen Energy, Foshan 528000, Peoples R China

[2] Shanghai Maritime Univ, Coll Arts & Sci, Shanghai 201306, Peoples R China

[3] Chinese Acad Sci, Key Lab Interfacial Phys & Technol, Shanghai 201800, Peoples R China

[4] Anqing Normal Univ, Sch Elect Engn & Intelligent Mfg, Anqing 246133, Peoples R China

来源：

VACUUM | 2022年 / 196卷

基金：

中国国家自然科学基金;

关键词：

Misfit dislocation; Strain; Hetero-interface; Transmission electron microscopy; Geometric phase analysis; PEIERLS-NABARRO MODEL; MECHANISM; FIELDS;

D O I：

10.1016/j.vacuum.2021.110711

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The misfit dislocation at Ge/Si hetero-interface was quantitatively investigated by a combination of highresolution transmission electron microscopy and geometric phase analysis. To describe the strain field around the misfit dislocation core at Ge/Si hetero-interface more accurately, a modified Foreman model is proposed by introducing a new half width of the misfit dislocation core into the original Foreman model. The experimentally measured strain field around the misfit dislocation core at Ge/Si hetero-interface was compared with the theoretical strain field calculated by the modified Foreman model. It is demonstrated that the modified Foreman model with the variable factor a = 2 is a perfect strain model of misfit dislocation at Ge/Si hetero-interface.

引用

页数：5

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