Characterization of a Silicon IGBT and Silicon Carbide MOSFET Cross-Switch Hybrid

被引：106

作者：

Rahimo, Munaf ^{[1
]}

Canales, Francisco ^{[2
]}

Minamisawa, Renato Amaral ^{[2
]}

Papadopoulos, Charalampos ^{[3
]}

Vemulapati, Umamaheswara ^{[2
]}

Mihaila, Andrei ^{[2
]}

Kicin, Slavo ^{[2
]}

Drofenik, Uwe ^{[2
]}

机构：

[1] ABB Switzerland Ltd, Grid Syst R&D, CH-5600 Lenzburg, Switzerland

[2] ABB Switzerland Ltd, Corp Res Ctr, CH-5405 Dattwil, Switzerland

[3] ABB Switzerland Ltd, Semicond R&D, CH-5600 Lenzburg, Switzerland

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2015年 / 30卷 / 09期

关键词：

Hybrid; IGBT; MOSFET; silicon (Si); silicon carbide (SiC); SCHOTTKY DIODES; POWER; GENERATION;

D O I：

10.1109/TPEL.2015.2402595

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A parallel arrangement of a silicon (Si) IGBT and a silicon carbide (SiC) MOSFET is experimentally demonstrated. The concept referred to as the cross-switch (XS) hybrid aims to reach optimum power device performance by providing low static and dynamic losses while improving the overall electrical and thermal properties due to the combination of both the bipolar Si IGBT and unipolar SiC MOSFET characteristics. For the purpose of demonstrating the XS hybrid, the parallel configuration is implemented experimentally in a single package for devices rated at 1200 V. Test results are obtained to validate this approach with respect to the static and dynamic performance when compared to a full Si IGBT and a full SiC MOSFET reference devices having the same power ratings as for the XS hybrid samples.

引用

页码：4638 / 4642

页数：5

共 17 条

[1] A new generation of high voltage MOSFETs breaks the limit line of silicon
Deboy, G
März, M
Stengl, JP
Strack, H
Tihanyi, J
Weber, H
[J]. INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 683 - 685
[2] Dewar S., 2000, PCIM C NUR GERM
[3] Donnellan B., 2012, APPL POW EL C CHIC I
[4] Frisch Michael, 2013, International Conference and Exhibition for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Proceedings, P462
[5] Comparison and Reduction of Conducted EMI in SiC JFET and Si IGBT-Based Motor Drives
Gong, Xun
Ferreira, Jan Abraham
[J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2014, 29 (04) : 1757 - 1767
[6] Hoffmann K. F, 2005, P EUR C POW EL APPL, P1
[7] JIANG YM, 1993, IEEE POWER ELECTRON, P151, DOI 10.1109/PESC.1993.471918
[8] Johnson CM, 2000, IEEE IND APPLIC SOC, P2941, DOI 10.1109/IAS.2000.882584
[9] Kimball JW, 2004, IEEE IND APPLIC SOC, P1233
[10] Lutz J., 2000, EUR POWER ELECT DRIV, V10

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