Characterization of a Silicon IGBT and Silicon Carbide MOSFET Cross-Switch Hybrid

被引：110

作者：

Rahimo, Munaf ^{[1
]}

Canales, Francisco ^{[2
]}

Minamisawa, Renato Amaral ^{[2
]}

Papadopoulos, Charalampos ^{[3
]}

Vemulapati, Umamaheswara ^{[2
]}

Mihaila, Andrei ^{[2
]}

Kicin, Slavo ^{[2
]}

Drofenik, Uwe ^{[2
]}

机构：

[1] ABB Switzerland Ltd, Grid Syst R&D, CH-5600 Lenzburg, Switzerland

[2] ABB Switzerland Ltd, Corp Res Ctr, CH-5405 Dattwil, Switzerland

[3] ABB Switzerland Ltd, Semicond R&D, CH-5600 Lenzburg, Switzerland

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2015年 / 30卷 / 09期

关键词：

Hybrid; IGBT; MOSFET; silicon (Si); silicon carbide (SiC); SCHOTTKY DIODES; POWER; GENERATION;

D O I：

10.1109/TPEL.2015.2402595

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A parallel arrangement of a silicon (Si) IGBT and a silicon carbide (SiC) MOSFET is experimentally demonstrated. The concept referred to as the cross-switch (XS) hybrid aims to reach optimum power device performance by providing low static and dynamic losses while improving the overall electrical and thermal properties due to the combination of both the bipolar Si IGBT and unipolar SiC MOSFET characteristics. For the purpose of demonstrating the XS hybrid, the parallel configuration is implemented experimentally in a single package for devices rated at 1200 V. Test results are obtained to validate this approach with respect to the static and dynamic performance when compared to a full Si IGBT and a full SiC MOSFET reference devices having the same power ratings as for the XS hybrid samples.

引用

页码：4638 / 4642

页数：5

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