Atomic layer deposition of ZnO/TiO2 multilayers: towards the understanding of Ti-doping in ZnO thin films

被引：18
作者：
Torrisi, G. [1 ,2 ]
Di Mauro, A. [2 ]
Scuderi, M. [3 ]
Nicotra, G. [3 ]
Impellizzeri, G. [2 ]
机构：
[1] Univ Catania, Dipartimento Fis & Astron, Via S Sofia 64, I-95123 Catania, Italy
[2] CNR IMM, Via S Sofia 64, I-95123 Catania, Italy
[3] CNR IMM, ZI 8 Str 5, I-95121 Catania, Italy
来源：
RSC ADVANCES | 2016年 / 6卷 / 91期
关键词：
ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; TRANSPARENT; FABRICATION; SUBSTRATE; ELECTRODE;
D O I：
10.1039/c6ra13773c
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Undoped and Ti-doped ZnO (TZO) films were deposited by atomic layer deposition (ALD). Titanium was introduced by alternating consecutive ZnO cycles between each TiO2 single layer (Ti nominal concentration of 2%). The electrical, optical, morphological, and structural properties of the films (less than 80 nm thick) were tested as a function of the deposition temperature (from 120 to 240 degrees C). The TZO films deposited at 200 degrees C showed the lowest resistivity: 3.0 x 10(-3) Omega cm. All the resulting TZO films were highly transparent, with an absorbance in the visible range of less than 3%. Thanks to an accurate investigation through transmission electron microscopy we ruled out the well-assessed explanation of an extrinsic doping mechanism of transparent conductive oxide (TCO), suggesting an alternative mechanism. These results demonstrate that the ALD is a promising technique to grow thin TZO films with remarkable electrical and optical properties.
引用
收藏
页码：88886 / 88895
页数：10
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