Atomic force microscope anodization lithography using a triarylsulfonium salt photoinitiator

被引：5
|
作者：
Jang, Eujean [1 ]
Kwun, Gijin [1 ]
Choi, Wansik [1 ]
Lee, Haiwon [1 ]
机构：
[1] Hanyang Univ, Dept Chem, Seoul 133791, South Korea
来源：
COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS | 2008年 / 313卷
关键词：
triarylsulfonium salts; photoacid generator (PAG); atomic force microscope (AFM); lithography;
D O I：
10.1016/j.colsurfa.2007.05.086
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Photoacid generators (PAGs) have been widely used as a key component in the development of chemically amplified photoresist. In this study, a PAG with good thermal stability and an electron-withdrawing group was applied to AFM anodization lithography. Specifically, triarylsulfonium salts (TAS) such as a diphenyl(4-tert-butoxycarbomethoxyphenyl)-sulfonium triflate (DTCPS-Tf) and triphenyl-sulfonium triflate (TPS-Tf) were used successfully to fabricate anodized nanostructures by AFM anodization lithography. In addition, the effect of electron-withdrawing materials and optimized lithographic conditions were studied through a systematic alteration of lithographic factors such as applied voltage, lithographic speed, and humidity. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：383 / 386
页数：4
相关论文
共 50 条
  • [1] Atomic force microscope anodization lithography using organic molecular assembly and ferritin
    Lee, Wonbae
    Kim, Hyunsook
    Lee, Haiwon
    Hara, Masahiko
    COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS, 2008, 313 : 402 - 406
  • [2] Surface functional group effect on atomic force microscope anodization lithography
    Lee, W
    Lee, H
    Chun, MS
    LANGMUIR, 2005, 21 (19) : 8839 - 8843
  • [3] Atomic force microscope anodization lithography using pulsed bias voltage synchronized with resonance frequency of cantilever
    Bae, S
    Han, CS
    Kim, MS
    Chung, CC
    Lee, H
    NANOTECHNOLOGY, 2005, 16 (10) : 2082 - 2085
  • [4] Effect of contact potential barrier of organic resists on atomic force microscope anodization lithography
    Kim, JO
    Shin, W
    Park, H
    Lee, H
    COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS, 2005, 257-58 : 251 - 254
  • [5] Study of overlay metrology in atomic force microscope lithography (overlaying lithography with atomic force microscope)
    Li, Xiaona
    Han, Li
    Gu, Wenqi
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (06): : 3101 - 3104
  • [6] Independent parallel lithography using the atomic force microscope
    J Vac Sci Technol B, 4 (2456):
  • [7] Independent parallel lithography using the atomic force microscope
    Minne, SC
    Manalis, SR
    Atalar, A
    Quate, CF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (04): : 2456 - 2461
  • [8] ENABLING SOFT LITHOGRAPHY USING AN ATOMIC FORCE MICROSCOPE
    Johannes, Matthew S.
    Cole, Daniel G.
    Clark, Robert L.
    DETC2008: PROCEEDINGS OF THE ASME INTERNATIONAL DESIGN ENGINEERING TECHNICAL CONFERENCE AND COMPUTERS AND INFORMATION IN ENGINEERING CONFERENCE , VOL 4, 2009, : 749 - 757
  • [9] A study on oxidization processes of YBaCuO superconducting thin films In atomic force microscope anodization lithography
    Kang, HG
    Park, JB
    Jahng, KY
    Lee, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (3B): : 2361 - 2364
  • [10] A study on oxidization processes of YBaCuO superconducting thin films in atomic force microscope anodization lithography
    Kang, Hyeong-Gon
    Park, Jong-Bae
    Jahng, Kwang-Yeop
    Lee, Haeseong
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (3 B): : 2361 - 2364
12345