Surface characterization of plasma etched DLC films by scanning tunneling microscopy and atomic force microscopy

被引：0
作者：
Hwang, ER
Choi, W
Iseri, Y
Tomokage, H
机构：
[1] Fukuoka Ind Sci & Technol Fdn, Chuo Ku, Fukuoka 8100001, Japan
[2] Kyushu Mitsumi Co Ltd, Izuka, Fukuoka 8208533, Japan
[3] Fukuoka Univ, Dept Elect Engn & Comp Sci, Jonan Ku, Fukuoka 8140180, Japan
来源：
BEAM INJECTION ASSESSMENT OF MICROSTRUCTURES IN SEMICONDUCTORS, 2000 | 2000年 / 78-79卷
关键词：
diamond-like carbon; reactive ion etching; sputter etching; surface roughness;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Effects of plasma etching on the surface morphology of DLC films have been investigated using scanning tunneling microscopy (STM) and atomic force microscopy (AFM). DLC films have been prepared by plasma-enhanced chemical vapor deposition (PE-CVD), and then etched in reactive ion plasma or argon sputter plasma. We have observed topological change of DLC films with etching time from AFM analysis more clearly than STM analysis. However, root mean square of surface roughness was almost the same in both STM and AFM analyses. The surface roughness of DLC film etched by reactive ion etching (REE) is more or less higher than those of as-deposited and sputter etched DLC films. This result is also verified by topology observation of AFM.
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页码：183 / 189
页数：7
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