A novel buried oxide isolation for monolithic RF inductors on silicon

被引：23

作者：

Erzgräber, HB ^{[1
]}

Grabolla, T ^{[1
]}

Richter, HH ^{[1
]}

Schley, P ^{[1
]}

Wolff, A ^{[1
]}

机构：

[1] Inst Semicond Phys, D-15230 Frankfurt, Germany

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746415

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a new approach to realizing high quality factor (Q) inductors using CMOS-compatible process steps only. The method is based on the preparation of very thick, buried oxide regions beneath the inductors to reduce parasitics. The behavior of inductors fabricated with a CMOS compatible, 3-level metal silicon technology conforms well with simulations.

引用

页码：535 / 539

页数：5

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