Optical limiting performances of transitional metal dichalcogenides MX2 (M = V, Nb, Ta; X = S, Se) with ultralow initial threshold and optical limiting threshold

被引:18
作者
Liang, Chenglu [1 ]
Wang, Enze [1 ]
Li, Xian [1 ]
Wang, Jing [1 ]
Liu, Yijun [1 ]
Chen, Binyi [1 ]
Chen, Hongxiang [1 ,2 ]
Liu, Yang [1 ,2 ,3 ,4 ]
Peng, Xiangfang [1 ]
机构
[1] Fujian Univ Technol, Dept Mat Sci & Engn, Fuzhou 350108, Peoples R China
[2] Fujian Univ Technol, Ctr Adv Energy & Funct Mat, Fuzhou 350108, Peoples R China
[3] Sichuan Univ, State Key Lab Polymer Mat Engn, Chengdu 610207, Peoples R China
[4] Huazhong Univ Sci & Technol, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China
基金
中国国家自然科学基金;
关键词
optical limiting; transitional metal dichalcogenide; initial threshold; optical limiting threshold; REVERSE SATURABLE ABSORPTION; 2-PHOTON ABSORPTION; WS2; LASER; MOS2; SATURATION; LAYER; WSE2;
D O I
10.3788/COL202220.021901
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The optical limiting performances of few-layer transitional metal dichalcogenides (TMDs) nanosheets in the VB group (VS2, VSe2, NbS2, NbSe2, TaS2, and TaSe2) were systematically investigated for the first time, to the best of our knowledge. It was found that these TMDs nanosheets showed a normalized transmittance in the range of 20%-40% at the input energy of 1.28 GW/cm(2). Ultralow initial threshold F-S (0.05-0.10 J/cm(2)) and optical limiting threshold F-OL (0.82-2.23 J/cm(2)) were achieved in the TMDs nanosheets, which surpassed most of the optical limiting materials. This work showed the potential of TMDs beyond MoS2 in optical limiting field.
引用
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页数:5
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