Large-Area Epitaxial Mono layer MoS2

被引:772
作者
Dumcenco, Dumitru [1 ]
Ovchinnikov, Dmitry [1 ]
Marinov, Kolyo [1 ]
Lazic, Predrag [5 ]
Gibertini, Marco [2 ]
Marzari, Nicola [2 ]
Sanchez, Oriol Lopez [1 ]
Kung, Yen-Cheng [1 ]
Krasnozhon, Daria [1 ]
Chen, Ming-Wei [1 ]
Bertolazzi, Simone [1 ]
Gillet, Philippe [3 ]
Fontcuberta i Morral, Anna [2 ]
Radenovic, Aleksandra [4 ]
Kis, Andras [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Inst Elect Engn, CH-1015 Lausanne, Switzerland
[2] Ecole Polytech Fed Lausanne, Inst Mat, CH-1015 Lausanne, Switzerland
[3] Ecole Polytech Fed Lausanne, Inst Condensed Matter Phys, CH-1015 Lausanne, Switzerland
[4] Ecole Polytech Fed Lausanne, Inst Bioengn, CH-1015 Lausanne, Switzerland
[5] Rudjer Boskovic Inst, HR-10000 Zagreb, Croatia
基金
芬兰科学院; 欧洲研究理事会;
关键词
two-dimensional materials; MOS2; epitaxial growth; electronic transport; grain boundaries; Kelvin probe force microscopy; DER-WAALS EPITAXY; HIGH-QUALITY MONOLAYER; VAPOR-PHASE GROWTH; TRANSPORT-PROPERTIES; ATOMIC LAYERS; SAPPHIRE; EXFOLIATION; TRANSITION; SURFACES; GRAPHENE;
D O I
10.1021/acsnano.5b01281
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Two-dimensional semiconductors such as MoS2 are an emerging material family with wide-ranging potential applications in electronics, optoelectronics, and energy harvesting. Large-area growth methods are needed to open the way to applications. Control over lattice orientation during growth remains a challenge. This is needed to minimize or even avoid the formation of grain boundaries, detrimental to electrical, optical, and mechanical properties of MoS2 and other 2D semiconductors. Here, we report on the growth of high-quality monolayer MoS2 with control over lattice orientation. We show that the monolayer film is composed of coalescing single islands with limited numbers of lattice orientation due to an epitaxial growth mechanism. Optical absorbance spectra acquired over large areas show significant absorbance in the high-energy part of the spectrum, indicating that MoS2 could also be interesting for harvesting this region of the solar spectrum and fabrication of UV-sensitive photodetectors. Even though the interaction between the growth substrate and MoS2 is strong enough to induce lattice alignment via van der Waals interaction, we can easily transfer the grown material and fabricate devices. Local potential mapping along channels in field-effect transistors shows that the single-crystal MoS2 grains in our film are well connected, with interfaces that do not degrade the electrical conductivity. This is also confirmed by the relatively large and length-independent mobility in devices with a channel length reaching 80 mu m.
引用
收藏
页码:4611 / 4620
页数:10
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