AlGaN/GaN/3C-SiC on diamond HEMTs with thick nitride layers prepared by bonding-first process

被引：9

作者：

Kagawa, Ryo ^{[1
]}

Kawamura, Keisuke ^{[2
]}

Sakaida, Yoshiki ^{[2
]}

Ouchi, Sumito ^{[2
]}

Uratani, Hiroki ^{[2
]}

Shimizu, Yasuo ^{[3
]}

Ohno, Yutaka ^{[4
]}

Nagai, Yasuyoshi ^{[5
]}

Liang, Jianbo ^{[1
]}

Shigekawa, Naoteru ^{[1
]}

机构：

[1] Osaka City Univ, Dept Elect Informat Syst, Sugimoto 3-3-138, Sumiyoshi, Osaka 5588585, Japan

[2] Air Water Inc, SiC Div, 2290-1 Takibe, Toyoshina Azumino, Nagano 3998204, Japan

[3] Natl Inst Mat Sci NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan

[4] Tohoku Univ, Inst Mat Res IMR, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan

[5] Tohoku Univ, Inst Mat Res IMR, 2145-2 Narita, Oarai, Ibaraki 3111313, Japan

来源：

APPLIED PHYSICS EXPRESS | 2022年 / 15卷 / 04期

基金：

日本科学技术振兴机构;

关键词：

GaN-on-diamond; high electron mobility transistor; 3C-SiC; thermal resistance; surface activated bonding; GAN HEMTS; ENERGY-GAP; TEMPERATURE; TECHNOLOGY; OPERATION;

D O I：

10.35848/1882-0786/ac5ba7

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricate AlGaN/GaN high electron mobility transistors (HEMTs) on diamond substrates by transferring 8 mu m heterostructures grown on 3C-SiC/Si templates and subsequently applying the conventional device process steps. No exfoliation of 3C-SiC/diamond bonding interfaces is observed during 800 degrees C annealing, the essential step for forming ohmic contacts on nitrides. The thermal resistance of HEMTs on diamond is 35% of that of HEMTs on Si, which is assumed to be the origin of smaller negative drain conductance in on-diamond HEMTs. The results imply that the bonding-first process is applicable for fabricating low-thermal-resistance HEMTs with thick nitride layers.

引用

页数：5

共 30 条

[1] Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures [J].

Ambacher, O ;

Smart, J ;

Shealy, JR ;

Weimann, NG ;

Chu, K ;

Murphy, M ;

Schaff, WJ ;

Eastman, LF ;

Dimitrov, R ;

Wittmer, L ;

Stutzmann, M ;

Rieger, W ;

Hilsenbeck, J .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3222-3233

[2] Three-dimensional finite-element thermal simulation of GaN-based HEMTs [J].

Bertoluzza, F. ;

Delmonte, N. ;

Menozzi, R. .

MICROELECTRONICS RELIABILITY, 2009, 49 (05) :468-473

[3] Elimination of the Low Resistivity of Si Substrates in GaN HEMTs by Introducing a SiC Intermediate and a Thick Nitride Layer [J].

Bose, Arijit ;

Biswas, Debaleen ;

Hishiki, Shigeomi ;

Ouchi, Sumito ;

Kitahara, Koichi ;

Kawamura, Keisuke ;

Wakejima, Akio .

IEEE ELECTRON DEVICE LETTERS, 2020, 41 (10) :1480-1483

[4] Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz [J].

Chao, Pane-Chane ;

Chu, Kenneth ;

Creamer, Carlton ;

Diaz, Jose ;

Yurovchak, Tom ;

Shur, Michael ;

Kallaher, Ray ;

McGray, Craig ;

Via, Glen David ;

Blevins, John D. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (11) :3658-3664

[5] GaN-on-Si Power Technology: Devices and Applications [J].

Chen, Kevin J. ;

Haeberlen, Oliver ;

Lidow, Alex ;

Tsai, Chun Lin ;

Ueda, Tetsuzo ;

Uemoto, Yasuhiro ;

Wu, Yifeng .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (03) :779-795

[6] Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices [J].

Cheng, Zhe ;

Mu, Fengwen ;

Yates, Luke ;

Suga, Tadatomo ;

Graham, Samuel .

ACS APPLIED MATERIALS & INTERFACES, 2020, 12 (07) :8376-8384

[7]

Chu KK, 2013, IEEE COMP SEMICON

[8] Raman scattering as a characterization tool for epitaxial GaN thin films grown on sapphire by turbo disk metal-organic chemical vapor deposition [J].

Feng, ZC ;

Schurman, M ;

Stall, RA ;

Pavlosky, M ;

Whitley, A .

APPLIED OPTICS, 1997, 36 (13) :2917-2922

[9] Formation and characterization of 4-inch GaN-on-diamond substrates [J].

Francis, D. ;

Faili, F. ;

Babic, D. ;

Ejeckam, F. ;

Nurmikko, A. ;

Maris, H. .

[10] Self-heating in high-power AlGaN-GaN HFET's [J].

Gaska, R ;

Osinsky, A ;

Yang, JW ;

Shur, MS .

IEEE ELECTRON DEVICE LETTERS, 1998, 19 (03) :89-91

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