Effect of doping concentration on broadband near-infrared emission of Bi doped zeolites

被引:3
作者
Bai, Zhenhua [1 ]
Fujii, Minoru [1 ]
Hasegawa, Takashi [2 ]
Imakita, Kenji [1 ]
Miwa, Yuji [1 ]
Mizuhata, Minoru [2 ]
Hayashi, Shinji [1 ]
机构
[1] Kobe Univ, Grad Sch Engn, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, Japan
[2] Kobe Univ, Grad Sch Engn, Dept Chem Sci & Engn, Nada Ku, Kobe, Hyogo 6578501, Japan
关键词
Zeolite; Near-infrared emission; Bismuth; Optical properties; Doping concentration; EXCHANGED ZEOLITE; LUMINESCENCE; PHOTOLUMINESCENCE; DYNAMICS; SPECTRA;
D O I
10.1016/j.micromeso.2011.04.021
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
A series of Bi doped zeolites are prepared by an ion-exchange process by changing doping concentration in a wide range, and the optical properties are investigated. The near-infrared photoluminescence (PL) intensity, full width at half maximum and decay time depend strongly on Bi doping concentration. The PL intensity increases 178 times when the concentration is changed from 0.3 to 1.5 at. %. At the same time, the lifetime increases from 83 to 527 mu s. The results prove the model that doped Bi acts not only as optically active centers, but also as pore-sealing substances to isolate the centers. The comparison of PL and Raman data suggests that in addition to previously proposed Bi2O3, other Bi-related materials, probably Bi metal, play an important role to isolate the active centers. (C) 2011 Elsevier Inc. All rights reserved.
引用
收藏
页码:21 / 25
页数:5
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