Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment

被引:22
|
作者
Lindgren, S. [1 ]
Affolder, A. A. [10 ]
Allport, P. P. [10 ]
Bates, R. [7 ]
Betancourt, C. [1 ]
Bohm, J. [14 ]
Brown, H. [10 ]
Buttar, C. [7 ]
Carter, J. R. [4 ]
Casse, G. [10 ]
Chen, H. [2 ,3 ]
Chilingarov, A. [9 ]
Cindro, V. [11 ]
Clark, A. [6 ]
Dawson, N. [1 ]
DeWilde, B. [16 ]
Doherty, F. [7 ]
Dolezal, Z. [13 ]
Eklund, L. [7 ]
Fadeyev, V. [1 ]
Ferrerre, D. [6 ]
Fox, H. [9 ]
French, R. [15 ]
Garcia, C. [18 ]
Gerling, M. [1 ]
Sevilla, S. Gonzalez [6 ]
Gorelov, I. [12 ]
Greenall, A. [10 ]
Grillo, A. A. [1 ]
Hamasaki, N. [17 ]
Hara, K. [17 ]
Hatano, H. [17 ]
Hoeferkamp, M. [12 ]
Hommels, L. B. A. [4 ]
Ikegami, Y. [8 ]
Jakobs, K. [5 ]
Kierstead, J. [2 ,3 ]
Kodys, P. [13 ]
Koehler, M. [5 ]
Kohriki, T. [8 ]
Kramberger, G. [11 ]
Lacasta, C. [18 ]
Li, Z. [2 ,3 ]
Lynn, D. [2 ,3 ]
Maddock, P. [1 ]
Mandic, I. [11 ]
Martinez-McKinney, F. [1 ]
Martii Garcia, S. [18 ]
Maunu, R. [16 ]
McCarthy, R. [16 ]
机构
[1] UC Santa Cruz, SCIPP, Santa Cruz, CA 95064 USA
[2] Brookhaven Natl Lab, Dept Phys, Upton, NY 11973 USA
[3] Instrumentat Div, Upton, NY 11973 USA
[4] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[5] Univ Freiburg, Inst Phys, D-79104 Freiburg, Germany
[6] Univ Geneva, Sect Phys, CH-1211 Geneva, Switzerland
[7] Univ Glasgow, Dept Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland
[8] High Energy Accelerator Org, KEK, INPS, Tsukuba, Ibaraki 3050801, Japan
[9] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England
[10] Univ Liverpool, Oliver Lodge Lab, Dept Phys, Liverpool L69 7ZE, Merseyside, England
[11] Univ Ljubljana, Dept Phys, Jozef Stefan Inst, Ljubljana 61000, Slovenia
[12] Univ New Mexico, Dept Phys & Astron, Albuquerque, NM 87131 USA
[13] Charles Univ Prague, Fac Math & Phys, Prague 8, Czech Republic
[14] Acad Sci Czech Republic, Inst Phys, Prague 18221 8, Czech Republic
[15] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[16] SUNY Stony Brook, Dept Phys & Astron, Stony Brook, NY 11794 USA
[17] Univ Tsukuba, Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058571, Japan
[18] UVEG, IFIC, Ctr Mixto, CSIC, Valencia 46071, Spain
基金
美国国家科学基金会;
关键词
p-Bulk silicon; Surface damage; Charge collection; Punch-through voltage; MICROSTRIP SENSORS; DETECTORS;
D O I
10.1016/j.nima.2010.04.094
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We are developing n(+)-in-p, p-bulk and n-readout, microstrip sensors as a non-inverting radiation hard silicon detector for the ATLAS Tracker Upgrade at the super LHC experiment. The surface radiation damages of the sensors fabricated by Hamamatsu Photonics are characterized on the interstrip capacitance, interstrip resistance and punch-through protection evolution. The detector should provide acceptable strip isolation, exceeding the input impedance of the signal readout chip similar to 1 k Omega, after the integrated luminosity of 6 ab(-1) which is twice the luminosity goal. Published by Elsevier B.V.
引用
收藏
页码:S111 / S117
页数:7
相关论文
共 4 条
  • [1] Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments
    Hara, K.
    Affolder, A. A.
    Allport, P. P.
    Bates, R.
    Betancourt, C.
    Bohm, J.
    Brown, H.
    Buttar, C.
    Carter, J. R.
    Casse, G.
    Chen, H.
    Chilingarov, A.
    Cindro, V.
    Clark, A.
    Dawson, N.
    DeWilde, B.
    Doherty, F.
    Dolezal, Z.
    Eklund, L.
    Fadeyev, V.
    Ferrere, D.
    Fox, H.
    French, R.
    Garcia, C.
    Gerling, M.
    Sevilla, S. Gonzalez
    Gorelov, I.
    Greenall, A.
    Grillo, A. A.
    Hamasaki, N.
    Hatano, H.
    Hoeferkamp, M.
    Hommels, L. B. A.
    Ikegami, Y.
    Jakobs, K.
    Kierstead, J.
    Kodys, P.
    Koehler, M.
    Kohriki, T.
    Kramberger, G.
    Lacasta, C.
    Li, Z.
    Lindgren, S.
    Lynn, D.
    Maddock, P.
    Mandic, I.
    Martinez-McKinney, F.
    Marti i Garcia, S.
    Maunu, R.
    McCarthy, R.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2011, 636 : S83 - S89
  • [2] Development of n-on-p silicon sensors for very high radiation environments
    Unno, Y.
    Affolder, A. A.
    Allport, P. P.
    Bates, R.
    Betancourt, C.
    Bohm, J.
    Brown, H.
    Buttar, C.
    Carter, J. R.
    Casse, G.
    Chen, H.
    Chilingarov, A.
    Cindro, V.
    Clark, A.
    Dawson, N.
    DeWilde, B.
    Dolezal, Z.
    Eklund, L.
    Fadeyev, V.
    Ferrere, D.
    Fox, H.
    French, R.
    Garcia, C.
    Gerling, M.
    Sevilla, S. Gonzalez
    Gorelov, I.
    Greenall, A.
    Grillo, A. A.
    Hamasaki, N.
    Hara, K.
    Hatano, H.
    Hoeferkamp, M.
    Hommels, L. B. A.
    Ikegami, Y.
    Jakobs, K.
    Kamada, S.
    Kierstead, J.
    Kodys, P.
    Kohler, M.
    Kohriki, T.
    Kramberger, G.
    Lacasta, C.
    Li, Z.
    Lindgren, S.
    Lynn, D.
    Mikestikova, M.
    Maddock, P.
    Mandic, I.
    Marti i Garcia, S.
    martinez-McKinney, F.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2011, 636 : S24 - S30
  • [3] Test beam evaluation of newly developed n-in-p planar pixel sensors for use in a high radiation environment
    Kimura, K.
    Yamaguchi, D.
    Motohashi, K.
    Nakamura, K.
    Unno, Y.
    Jinnouchi, O.
    Altenheiner, S.
    Blue, A.
    Bomben, M.
    Butter, A.
    Cervelli, A.
    Crawley, S.
    Ducourthial, A.
    Gisen, A.
    Hagihara, M.
    Hanagaki, K.
    Hara, K.
    Hirose, M.
    Homma, Y.
    Ikegami, Y.
    Kamada, S.
    Kono, T.
    Macchiolo, A.
    Marchiori, G.
    Meloni, F.
    Milovanovic, M.
    Morton, A.
    Mullier, G.
    Munoz, F. J.
    Nellist, C.
    Paschen, B.
    Quadt, A.
    Rashid, T.
    Rieger, J.
    Rummler, A.
    Sato, K.
    Sato, K.
    Savic, N.
    Sawai, H.
    Sexton, K.
    Stramaglia, M. E.
    Swiatlowski, M.
    Takashima, R.
    Takubo, Y.
    Terzo, S.
    Todome, K.
    Tojo, J.
    Van Houten, K.
    Weingarten, J.
    Wonsak, S.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2016, 831 : 140 - 146
  • [4] Development of n+ -in-p large-area silicon microstrip sensors for very high radiation environments-ATLAS12 design and initial results
    Unno, Y.
    Edwards, S. O.
    Pyatt, S.
    Thomas, J. P.
    Wilson, J. A.
    Kierstead, J.
    Lynn, D.
    Carter, J. R.
    Hommels, L. B. A.
    Robinson, D.
    Bloch, I.
    Gregor, I. M.
    Tackmann, K.
    Betancourt, C.
    Jakobs, K.
    Kuehn, S.
    Mori, R.
    Parzefall, U.
    Wiik-Fucks, L.
    Clark, A.
    Ferrere, D.
    Sevilla, S. Gonzalez
    Ashby, J.
    Blue, A.
    Bates, R.
    Buttar, C.
    Doherty, F.
    Eklund, L.
    McMullen, T.
    McEwan, F.
    O'Shea, V.
    Kamada, S.
    Yamamura, K.
    Ikegami, Y.
    Nakamura, K.
    Takubo, Y.
    Nishimura, R.
    Takashima, R.
    Chilingarov, A.
    Fox, H.
    Affolder, A. A.
    Allport, P. P.
    Casse, G.
    Dervan, P.
    Forshaw, D.
    Greenall, A.
    Wonsak, S.
    Wormald, M.
    Cindro, V.
    Kramberger, G.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2014, 765 : 80 - 90