Characterization of SiOx/Si/SiOx coated n-InP facets of semiconductor lasers using spatially-resolved photoluminescence

被引：1
作者：
Lam, SKK
Cassidy, DT
Mallard, RE
机构：
[1] MDA, Brampton, ON L6S 4J3, Canada
[2] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada
[3] Bookham Inc, Ottawa, ON K2K 2B5, Canada
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 11期
关键词：
laser diode; spatially-resolved photoluminescence; facet coating; InGaAsP/InP; lifetest;
D O I：
10.1143/JJAP.44.8007
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Maps of the room temperature photoluminescence (PL) yield from SiOx/Si/SiOx coated semiconductor laser facets were made during the course of accelerated lifetesting. A localized degradation of the PL yield was detected under the active region after aging, which signifies a localized decrease of the radiative recombination efficiency. The surface reflectance was also investigated and was found to be uncorrelated with the localized degradation of the PL yield.
引用
收藏
页码：8007 / 8009
页数：3
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