Thickness Effect on Operational Modes of ZnGa2O4 MOSFETs

被引：31

作者：

Cheng, Li-Chung ^{[1
]}

Huang, Chiung-Yi ^{[1
]}

Horng, Ray-Hua ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[2] Natl Chung Hsing Univ, Grad Inst Precis Engn, Taichung 402, Taiwan

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2018年 / 6卷 / 01期

关键词：

ZnGa2O4; thickness effect; MOSFETs; enhancement mode; breakdown voltage; RESPONSIVITY;

D O I：

10.1109/JEDS.2018.2803078

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The device mechanism from depletion to enhancement mode for ZnGa2O4 metal-oxide semiconductor field effect transistors (MOSFETs) grown on the sapphire substrate by metalorganic chemical-vapor deposition was studied. It was found that the thickness of the ZnGa2O4 thin-film would affect the operational mode of the MOSFETs. Under the low-voltage operation (V-DS = 0.5 V), the transistors exhibited a high on/off ratio from 10(7) to 10(4), low subthreshold swing from 150 to 330 mV/dec, high field-effect mobility from 4.2 to 0.054 cm(2)/V-s and threshold voltages from - 17.8 to 4.1 V (using constant current = 1 nA). These electrical properties all depend on the thickness of the ZnGa2O4 thin-film transistors. Finally, the e-mode ZnGa2O4 thin-film transistor with off-state breakdown voltage over 400 V is fabricated.

引用

页码：432 / 437

页数：6

共 21 条

[1] Photocurrent characteristics of individual ZnGa2O4 nanowires [J].