Self-Assembled Nanostructured Tin Oxide Thin Films at the Air-Water Interface for Selective H2S Detection

被引:6
作者
Bellare, Pavithra [1 ]
Sakhuja, Neha [2 ]
Kundu, Subhajit [1 ]
Bhat, Navakanta [2 ]
Ravishankar, N. [1 ]
机构
[1] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India
[2] Indian Inst Sci, Ctr Nanosci & Engn, Bangalore 560012, Karnataka, India
关键词
self-assembly; gas sensing; metal oxides; air-water interface; SnO2; SENSING CHARACTERISTICS; GRAPHENE OXIDE; FAST-RESPONSE; GAS SENSORS; NANOPARTICLES; SNO2; CUO; NANOWIRES; FACILE; MECHANISM;
D O I
10.1021/acsanm.0c00412
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Simple, inexpensive, and scalable strategies for metal oxide thin film growth are critical for potential applications in the field of gas sensing. Here, we report a general method for the synthesis of freestanding oxide thin films via a one-step, surfactant-free hydrothermal reaction wherein the oxide film forms at the air-water interface. Using SnO2 and PdO as model systems, we show that the thin films, thus formed, have lateral dimensions of the order of centimeters and thickness of the order of tens of nanometers. Transmission electron microscopy (TEM) has been used to understand the growth mechanism of the films. On the basis of these studies, we propose that the metal oxide particles formed in the bulk of the solution move to the interface and get trapped to form a continuous, polycrystalline film. X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) measurements have been performed to understand the structure, morphology, and thickness of the films. Thickness tunability by varying the precursor concentration has been explored, which in turn affects optical and gas sensing properties. Thin SnO2 films (30 nm) revealed an ultrasensitive response (R) of 25000% to 6 ppm of H2S at 150 degrees C while demonstrating 25 ppb (R = 19.3%) as the experimental lowest limit of detection. The selectivity of these nanostructured films toward H2S stands tall among the other interfering gases by exhibiting an similar to 2 orders higher response magnitude. Furthermore, these thin films are highly stable at elevated temperatures.
引用
收藏
页码:3730 / 3740
页数:11
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