Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN

被引：158
|
作者：
Jang, JS [1 ]
Chang, IS
Kim, HK
Seong, TY
Lee, SH
Park, SJ
机构：
[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 506712, South Korea
[2] Kwangju Inst Sci & Technol, Ctr Elect Mat Res, Kwangju 506712, South Korea
来源：
APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 01期
关键词：
D O I：
10.1063/1.123954
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on a Pt (20 nm) Ni (30 nm)/Au (80 nm) metallization scheme for low-resistance ohmic contacts to the moderately doped p-type GaN:Mg (3X10(17) cm(-3)). Both as-deposited and annealed Pt/Ni/Au contacts on p-GaN exhibit linear current-voltage characteristics, showing that a high-quality ohmic contact is formed. The Pt/Ni/Au scheme shows the specific contact resistance of 5.1X10(-4) Ohm cm(2) when annealed at 350 degrees C for 1 min in a flowing N-2 atmosphere. (C) 1999 American Institute of Physics. [S0003-6951(99)03101-0].
引用
收藏
页码：70 / 72
页数：3
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