GaN reactive ion etching using SiCl4:Ar:SF6 chemistry

被引：6

作者：

Sillero, E ^{[1
]}

Calle, F ^{[1
]}

Sánchez-García, MA ^{[1
]}

机构：

[1] Univ Politecn Madrid, ETSI Telecomun, ISOM DIE, E-28040 Madrid, Spain

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2005年 / 16卷 / 07期

关键词：

D O I：

10.1007/s10854-005-2306-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reactive ion etching with SiCl4:Ar:SF6 mixtures of gallium nitride epitaxial layers grown by metal organic chemical vapour deposition (MOCVD) has been studied. The effects of several factors such as gas mixture, chamber pressure, and drive power on the etch rate and etched profile have been investigated. A strong dependence of both properties with the amount of SF6 present in the mixture has been found. High etch rates (> 50 nm/min) and controllable sidewall angles and smoothness have been achieved. (C) 2005 Springer Science + Business Media, Inc.

引用

页码：409 / 413

页数：5

共 50 条

[41] RADICAL GENERATION MECHANISM AND RADICAL EFFECT ON ALUMINUM ANISOTROPIC ETCHING IN SICL4 REACTIVE ION ETCHING
SATO, M
NAKAMURA, H
YOSHIKAWA, A
ARITA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (09): : 1568 - 1574
[42] Reactive ion etching of copper films in SiCl4 and N2 mixture
Ohno, Kazuhide
Sato, Masaaki
Arita, Yoshinobu
Japanese Journal of Applied Physics, Part 2: Letters, 1989, 28 (06):
[43] REACTIVE ION ETCHING OF GAAS, ALGAAS, AND GASB IN CL2 AND SICL4
PEARTON, SJ
CHAKRABARTI, UK
HOBSON, WS
KINSELLA, AP
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04): : 607 - 617
[44] FABRICATION OF SUBMICROMETER STRUCTURES IN SI USING SICL4/O2 REACTIVE-ION ETCHING
CABRAL, SM
RATHMAN, DD
ECONOMOU, NP
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C81 - C81
[45] RADICAL GENERATION MECHANISM AND RADICAL EFFECT ON ALUMINUM ANISOTROPIC ETCHING IN SiCl4 REACTIVE ION ETCHING.
Sato, Masaaki
Nakamura, Hiroaki
Yoshikawa, Akira
Arita, Yoshinobu
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (09): : 1568 - 1574
[46] NEW CHEMISTRY FOR SELECTIVE REACTIVE ION ETCHING OF INGAAS AND INP OVER INALAS IN SICL4/SIF4/HBR PLASMAS
MURAD, SK
BEAUMONT, SP
WILKINSON, CDW
APPLIED PHYSICS LETTERS, 1995, 67 (18) : 2660 - 2662
[47] EQUAL RATE AND ANISOTROPIC REACTIVE ION ETCHING OF GAAS ALGAAS HETEROSTRUCTURES IN SICL4 PLASMA
SALIMIAN, S
COOPER, CB
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C128 - C128
[48] REACTIVE ION ETCHING INDUCED DAMAGE IN GAAS AND AL0.3GA0.7AS USING SICL4
CHEUNG, R
THOMS, S
WATT, M
FOAD, MA
SOTOMAYORTORRES, CM
WILKINSON, CDW
COX, UJ
COWLEY, RA
DUNSCOMBE, C
WILLIAMS, RH
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (09) : 1189 - 1198
[49] Thermal Reactive Ion Etching of Minor Metals with SF6 Plasma
Han, Gang
Murata, Yuki
Minami, Yuto
Sohgawa, Masayuki
Abe, Takashi
SENSORS AND MATERIALS, 2017, 29 (03) : 217 - 223
[50] ION CHEMISTRY OF SF6
FEHSENFE.FC
JOURNAL OF CHEMICAL PHYSICS, 1971, 54 (01) : 438 - &

← 1 2 3 4 5 →