Cu2ZnSnSe4 device obtained by formate chemistry for metallic precursor layer fabrication

被引:2
作者
Tombolato, Sara [1 ,2 ]
Berner, Ulrich [3 ,4 ]
Colombara, Diego [3 ]
Chrastina, Daniel [5 ]
Widenmeyer, Markus [4 ]
Binetti, Simona O. [1 ,2 ]
Dale, Phillip J. [3 ]
机构
[1] Univ Milano Bicocca, Dept Mat Sci, Milan, Italy
[2] Univ Milano Bicocca, Solar Energy Res Ctr MIB SOLAR, Milan, Italy
[3] Univ Luxembourg, Lab Energy Mat, Phys & Mat Sci Res Unit, L-4422 Luxembourg, Luxembourg
[4] Robert Bosch GmbH, Corp Sect Res & Adv Engn, Appl Res Chem CR ARC, D-70839 Gerlingen, Germany
[5] Politecn Milan, Dept Phys, L NESS, Polo Como, I-22100 Como, Italy
关键词
Thin film photovoltaics; Cu2ZnSnSe4 solar cells; Kesterite; Wet process; SOLAR-CELLS;
D O I
10.1016/j.solener.2015.03.050
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Cu2ZnSnSe4 films were prepared by selenization of metallic precursors obtained by a new wet process involving metal formates. Cu(HCOO)(2) and Zn(HCOO)(2) were used as copper and zinc sources respectively, while tin was introduced as a methoxide. The elemental analysis of the resulting absorber layers revealed a very low carbon content (less than 0.2 wt%), which is believed to be a feature that chemical methods need to have in order to stand out as valuable alternatives to high-vacuum processes in this field. Solar cells with efficiencies of up to 2.39% with V-oc of 207 mV, a J(sc) of 31.2 mA/cm(2) and a fill factor of 37.1% were achieved for these copper-poor CZTSe absorbers. (c) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:287 / 292
页数:6
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