High-Performance ALD Al-Doped ZnO Thin-Film Transistors Grown on Flexible Substrates

被引：17

作者：

Rezk, Ayman ^{[1
]}

Saadat, Irfan ^{[1
]}

机构：

[1] Khalifa Univ, Elect & Comp Engn Dept, Abu Dhabi, U Arab Emirates

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 02期

关键词：

Atomic layer deposition; doped zinc oxide; flexible structures; piezoelectric films; thin film transistors; zinc oxide; ELECTRICAL-PROPERTIES;

D O I：

10.1109/LED.2019.2890831

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a CMOS compatible high-performance ALD Al-doped ZnO thin-film transistor (TFT) fabricated on flexible substrate with a sub-150 degrees C processing temperature. The TFTs channel are optimized through Al doping (2-3 at.%) using all low-temperature steps to enable flexible substrate processing while minimizing the piezoelectric effect in the channel. The optimized device has an electron mobility as high as similar to 30 cm(2)/Vs in comparison to earlier reported values of 0.1-0.7 cm(2)/Vs for ZnO TFTs while maintaining desired threshold voltages of 1-2 V and I-ON/I-OFF ratios of 10(7)-10(9).

引用

页码：240 / 242

页数：3

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