Development and characterization of transparent and conductive InZnO films by magnetron sputtering at room temperature

被引:9
作者
Alexander, J. Nicholas [1 ,2 ]
Sun, Neville [3 ]
Sun, Richard [3 ]
Efstathiadis, Harry [1 ,2 ]
Haldar, Pradeep [1 ,2 ]
机构
[1] SUNY Albany, Polytech Inst, Coll Nanoscale Sci, Albany, NY 12203 USA
[2] SUNY Albany, Polytech Inst, Coll Engn, Albany, NY 12203 USA
[3] Angstrom Sun Technol Inc, Acton, MA 01720 USA
基金
美国能源部;
关键词
Oxide materials; Semiconductors; Thin films; Electronic properties; Optical properties; OXIDE THIN-FILMS; ELECTRICAL-PROPERTIES; ELECTRODES; DEVICES; ITO;
D O I
10.1016/j.jallcom.2015.01.302
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The electrical and optical properties of InZnO for use as a transparent conducting oxide (TCO) is reported through the investigation of the concentration of indium and oxygen in the film. InZnO films (10-30 wt.% In) were deposited by magnetron sputtering without substrate heating or annealing from a ceramic ZnO and a metallic indium target. The film's properties were investigated by X-ray photoelectric spectroscopy (XPS), 4-point probe, UV-vis spectroscopy (UV-vis), spectroscopic ellipsometry, and Hall measurements. InZnO films obtained properties with low resistivity, on the order of similar to 5.5 x 10(-4) ohm-cm, with a mobility similar to 35 cm(2)/V S, and carrier concentrations similar to 3 * 10(20) cm(-3). The band-gap ranged from 2.7 to 3.2 eV with transmission of several samples > 80%. InZnO has demonstrated properties adequate for photovoltaic applications. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:157 / 164
页数:8
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