Degradation of InGaN-based MQW solar cells under 405 nm laser excitation

被引：5
作者：
De Santi, C. [1 ,2 ]
Meneghini, M. [1 ]
Caria, A. [1 ]
Dogmus, E. [3 ]
Zegaoui, M. [3 ]
Medjdoub, F. [3 ]
Zanoni, E. [1 ]
Meneghesso, G. [1 ]
机构：
[1] Univ Padua, Dept Informat Engn, Via Gradenigo 6-B, I-35131 Padua, Italy
[2] Univ Padua, Ctr Giorgio Levi Cases, Via Marzolo 9, I-35131 Padua, Italy
[3] IEMN CNRS, Ave Poincare CS 60069, F-59652 Villeneuve Dascq, France
来源：
MICROELECTRONICS RELIABILITY | 2017年 / 76卷
关键词：
YELLOW LUMINESCENCE; EFFICIENCY; GAN;
D O I：
10.1016/j.microrel.2017.06.072
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Within this paper we analyze the reliability of 25 x multi quantum well InGaN-based devices, designed to be used as high power photodetectors or in multi-junction solar cells. Under stress with monochromatic excitation at 405 nm by means of a laser diode, we detect degradation at optical power levels significantly above the common AM1.5 spectrum; the main degradation modes are a reduction in short circuit current and in open circuit voltage, and an improvement in fill factor. The analysis of the wavelength-dependent EQE highlights, as a consequence of stress, the increase in concentration of a deep level compatible with the yellow luminescence in gallium nitride, suggesting that gallium vacancies may play a role in the degradation of the detectors. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码：575 / 578
页数：4
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