Correlation between morphology and resistive switching behaviour of WO3 nanostructures

被引：6

作者：

Balraj, Babu ^{[1
,2
,3
]}

Sivakumar, Chandrasekar ^{[1
,2
]}

Chung, Pei-Fang ^{[1
,2
]}

Bharathi, Mohanbabu ^{[4
]}

Nagarajan, Senthil Kumar ^{[5
]}

Ho, Mon-Shu ^{[1
,2
]}

机构：

[1] Natl Chung Hsing Univ, Dept Phys, Taichung 40227, Taiwan

[2] Natl Chung Hsing Univ, Innovat & Dev Ctr Sustainable Agr IDCSA, Taichung 40227, Taiwan

[3] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300044, Taiwan

[4] Xiamen Univ, Natl Model Inst Microelect, Xiamen 361005, Peoples R China

[5] Kongunadu Arts & Sci Coll, Postgrad & Res Dept Phys, Coimbatore 641029, Tamil Nadu, India

来源：

MATERIALS LETTERS | 2022年 / 308卷

关键词：

Resistive switching; Hydrothermal; Structural; XPS; Electrical properties; MEMORY;

D O I：

10.1016/j.matlet.2021.131123

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In recent years, the non-volatile resistive random-access memory (ReRAM) has been investigated for nextgeneration memory devices to fulfill the limitations of commercial transistor-based memory devices. Every now and then, peculiar nanostructures with unique characteristics are reported. However, the influence of distinct nanostructures of a same metal oxide material on the resistive switching performance are not yet surveyed in detail. In this work, two structurally distinct WO3 nanostructures, namely nanoplates and nanocubes, were synthesized through hydrothermal method. The crystalline nature, morphology, atomic composition, and chemical states of WO3 nanostructures were characterized effectively. The fabricated WO3 ReRAM devices were exhibited bipolar resistive switching and the performance of nanoplate and nanocube devices are distinguished in detail.

引用

页数：4

共 16 条

[1] Memristive properties of hexagonal WO3 nanowires induced by oxygen vacancy migration [J].