The effect of an annealing process on atomic layer deposited TiO2 thin films

被引：15
作者：
Kim, Byunguk [1 ]
Kang, Taeseong [1 ]
Lee, Gucheol [2 ]
Jeon, Hyeongtag [1 ,2 ]
机构：
[1] Hanyang Univ, Dept Nanoscale Semicond Engn, Seoul 133791, South Korea
[2] Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea
来源：
NANOTECHNOLOGY | 2022年 / 33卷 / 04期
关键词：
titanium dioxide; atomic layer deposition; low temperature annealing process; high-k; low leakage current; OXYGEN VACANCY; DRAM;
D O I：
10.1088/1361-6528/ac2f28
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this paper, we study the property changes in TiO2 thin films related to annealing under various conditions. XPS analysis showed that the concentration of oxygen vacancies in TiO2 thin films was reduced by annealing. In the case of annealing in an O-2 and air atmosphere, the oxygen vacancy concentration was reduced to the greatest extent as oxygen diffused into the TiO2 thin film and rearrangement of atoms occurred. XRD analysis showed that the anatase structure of annealed TiO2 thin films was clearly present compared to the as-deposited TiO2 thin film. I-V analysis showed that the lower the concentration of oxygen vacancy, the lower the leakage current (O-2 annealed TiO2: 10(-4) A cm(-2)) than as dep TiO2 thin film (similar to 10(-1) A cm(-2)). The dielectric constant of annealed TiO2 thin films was 26-30 which was higher than the as-deposited TiO2 thin film (k similar to 18) because the anatase structure became more apparent.
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页数：8
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共 32 条
[1]   Atomic layer deposition of high-permittivity TiO2 dielectrics with low leakage current on RuO2 in TiCl4-based processes [J].
Aarik, Jaan ;
Hudec, Boris ;
Husekova, Kristina ;
Rammula, Raul ;
Kasikov, Aarne ;
Arroval, Tonis ;
Uustare, Teet ;
Froehlich, Karol .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (07)
[2]   Influence of substrate annealing on inducing Ti3+ and oxygen vacancy in TiO2 thin films deposited via RF magnetron sputtering [J].
Abdullah, S. A. ;
Sahdan, M. Z. ;
Nafarizal, N. ;
Saim, H. ;
Embong, Z. ;
Rohaida, C. H. Cik ;
Adriyanto, F. .
APPLIED SURFACE SCIENCE, 2018, 462 :575-582
[3]   Electrical conduction and band offsets in Si/HfxTi1-xO2/metal structures [J].
Afanas'ev, VV ;
Stesmans, A ;
Chen, F ;
Li, M ;
Campbell, SA .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (12) :7936-7939
[4]   Formation of oxygen vacancies and Ti3+ state in TiO2 thin film and enhanced optical properties by air plasma treatment [J].
Bharti, Bandna ;
Kumar, Santosh ;
Lee, Heung-No ;
Kumar, Rajesh .
SCIENTIFIC REPORTS, 2016, 6
[5]   Effect of crystallinity on the dielectric properties of Ba0.5Sr0.5TiO3 thin films [J].
Chiu, MC ;
Cheng, CF ;
Wu, WT ;
Shieu, FS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (06) :F66-F70
[6]   Tuning the electronic band structure and optoelectrical characteristics of ALD-grown Zn(O,S) buffer layers for SnS solar cells [J].
Choi, Hyeongsu ;
Lee, Namgue ;
Park, Hyunwoo ;
Choi, Yeonsik ;
Yuk, Hyunwoo ;
Lee, Junghoon ;
Lee, Sung Gwon ;
Lee, Eun Jong ;
Jeon, Hyeongtag .
OPTIK, 2021, 228
[7]   Reduced and n-Type Doped TiO2: Nature of Ti3+ Species [J].
Di Valentin, Cristiana ;
Pacchioni, Gianfranco ;
Selloni, Annabella .
JOURNAL OF PHYSICAL CHEMISTRY C, 2009, 113 (48) :20543-20552
[8]   Growth of high-dielectric-constant TiO2 films in capacitors with RuO2 electrodes [J].
Frohlich, K. ;
Tapajna, M. ;
Rosova, A. ;
Dobrocka, E. ;
Husekova, K. ;
Aarik, J. ;
Aidla, A. .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 11 (06) :G19-G21
[9]   Reduction of Oxygen Vacancy Related Traps in TiO2 and the Impacts on Hybrid Perovskite Solar Cells [J].
Ho, Yu-Che ;
Hoque, Md Nadim Ferdous ;
Stoneham, Elizabeth ;
Warzywoda, Juliusz ;
Dallas, Tim ;
Fan, Zhaoyang .
JOURNAL OF PHYSICAL CHEMISTRY C, 2017, 121 (43) :23939-23946
[10]   TiO2/Al2O3/TiO2 nanolaminated thin films for DRAM capacitor deposited by plasma-enhanced atomic layer deposition [J].
Jeon, Woojin ;
Chung, Hoi-Sung ;
Joo, Daekwon ;
Kang, Sang-Won .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 11 (02) :H19-H21
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