The effect of an annealing process on atomic layer deposited TiO2 thin films

被引：13
作者：
Kim, Byunguk [1 ]
Kang, Taeseong [1 ]
Lee, Gucheol [2 ]
Jeon, Hyeongtag [1 ,2 ]
机构：
[1] Hanyang Univ, Dept Nanoscale Semicond Engn, Seoul 133791, South Korea
[2] Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea
来源：
NANOTECHNOLOGY | 2022年 / 33卷 / 04期
关键词：
titanium dioxide; atomic layer deposition; low temperature annealing process; high-k; low leakage current; OXYGEN VACANCY; DRAM;
D O I：
10.1088/1361-6528/ac2f28
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this paper, we study the property changes in TiO2 thin films related to annealing under various conditions. XPS analysis showed that the concentration of oxygen vacancies in TiO2 thin films was reduced by annealing. In the case of annealing in an O-2 and air atmosphere, the oxygen vacancy concentration was reduced to the greatest extent as oxygen diffused into the TiO2 thin film and rearrangement of atoms occurred. XRD analysis showed that the anatase structure of annealed TiO2 thin films was clearly present compared to the as-deposited TiO2 thin film. I-V analysis showed that the lower the concentration of oxygen vacancy, the lower the leakage current (O-2 annealed TiO2: 10(-4) A cm(-2)) than as dep TiO2 thin film (similar to 10(-1) A cm(-2)). The dielectric constant of annealed TiO2 thin films was 26-30 which was higher than the as-deposited TiO2 thin film (k similar to 18) because the anatase structure became more apparent.
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页数：8
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