Growth of bulk SiGe single crystals by liquid phase diffusion

被引：64
作者：
Yildiz, M
Dost, S [1 ]
Lent, B
机构：
[1] Univ Victoria, Crystal Growth Lab, Victoria, BC V8W 3P6, Canada
[2] DL Crystals Inc, Victoria, BC V8W 3W2, Canada
来源：
JOURNAL OF CRYSTAL GROWTH | 2005年 / 280卷 / 1-2期
基金：
加拿大自然科学与工程研究理事会;
关键词：
diffusion; single crystal; liquid phase; silicon; germanium;
D O I：
10.1016/j.jcrysgro.2005.03.030
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The article presents a study for liquid phase diffusion (LPD) growth of compositionally graded, germanium-rich SixGe1-x single crystals of 25 mm in diameter for use as lattice-matched substrates for the growth of SixGe1-x single crystals by liquid phase electropitaxy (LPEE), or traveling heater method (THM). Grown crystals were characterized by microscopic examination after chemical etching for delineation of the degree of single crystallinity and growth striations. Compositional mapping of selected crystals was performed by using electron probe micro analysis (EPMA) as well as energy dispersive X-ray analysis (EDX). It was shown that the LPD technique can be utilized to obtain SixGe1-x single crystals up to 6-8 at% Si with uniform radial composition distribution. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：151 / 160
页数：10
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