Effects of X-ray irradiation on optical property and defect relaxation in MeV ion-implanted MgO

被引:2
作者
Ogiso, H [1 ]
Nakano, S [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, AIST, Inst Mech Syst Engn, Tsukuba, Ibaraki 3058564, Japan
关键词
ion implantation; X-ray irradiation; defect restoring;
D O I
10.1016/j.surfcoat.2004.08.078
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Thermal annealing is usually used to restore defects in an ion-implanted layer as a posttreatment. This research proposes an X-ray irradiation method to restore defects, as well as thermal annealing. The advantages of this method are that low-melting temperature materials can be processed and that fine patterning can be achieved. To validate this method, MgO single crystal (100) was implanted with 3.1 MeV Au ions at a dose of 2 X 10(16) cm(-2) and then irradiated with X-rays. The results showed that the X-ray irradiation affected the optical absorption spectrum, the restoration of the defects, and the diffusion of the implanted atoms, which means that the effect of the X-ray irradiation is similar to thermal annealing. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:15 / 18
页数:4
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