ion implantation;
X-ray irradiation;
defect restoring;
D O I:
10.1016/j.surfcoat.2004.08.078
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
Thermal annealing is usually used to restore defects in an ion-implanted layer as a posttreatment. This research proposes an X-ray irradiation method to restore defects, as well as thermal annealing. The advantages of this method are that low-melting temperature materials can be processed and that fine patterning can be achieved. To validate this method, MgO single crystal (100) was implanted with 3.1 MeV Au ions at a dose of 2 X 10(16) cm(-2) and then irradiated with X-rays. The results showed that the X-ray irradiation affected the optical absorption spectrum, the restoration of the defects, and the diffusion of the implanted atoms, which means that the effect of the X-ray irradiation is similar to thermal annealing. (c) 2004 Elsevier B.V. All rights reserved.