Ka-Band P-I-N Diode Based Digital Phase Shifter

被引:0
作者
Kramer, Daniel [1 ]
机构
[1] MACOM, Lowell, MA 01851 USA
来源
2018 13TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2018年
关键词
5G mobile communication; Aluminum Gallium Arsenide; Electromagnetic Analysis; MMICs; P-I-N diodes;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Phase shifters are an important part of phased array antennas, which the next generation 5G wireless communication networks will rely on. This paper presents 4-bit and 6-bit digital phase shifters with very low loss and high power handling that function from 27.5 to 29.5 GHz, a frequency band being considered for 5G. This is achieved by using a combination of all shunt P-I-N diodes switches and delay lines on the MACOM AlGaAs P-I-N diode process. The chips have integrated bias networks and work well with MACOM's MADR-009443 quad driver.
引用
收藏
页码:317 / 320
页数:4
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