White light emitting diode based on quantum dots and MEH-PPV

被引:1
作者
Sun Li-Zhi [1 ]
Zhao Su-Ling [1 ]
Xu Zheng [1 ]
Yin Hui-Li [1 ]
Zhang Cheng-Wen [1 ]
Long Zhi-Juan [1 ]
Hong Xiao-Xia [1 ]
Wang Peng [1 ]
Xu Xu-Rong [1 ]
机构
[1] Beijing Jiaotong Univ, Key Lab Luminescence & Opt Informat, Inst Optoelect Technol, Minist Educ, Beijing 100044, Peoples R China
基金
国家高技术研究发展计划(863计划); 高等学校博士学科点专项科研基金; 中国国家自然科学基金;
关键词
quantum dots; MEH-PPV; white light; dope; RESONANCE ENERGY-TRANSFER; ELECTROLUMINESCENT DEVICES; NANOCRYSTALS;
D O I
10.7498/aps.65.067301
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The white light emitting diode (LED) devices, in which blue-emitting quantum dots doped in the polymer of poly [2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylene vinylene] (MEH-PPV) serve as the active layer, have been fabricated in a nitrogen-filled glove box; the devices have the structure of ITO/PEDOT/MEH-PPV:QDs(B)/LiF/Al. After a systematical investigation, we report the effect of different quantum dots (QDs) doping concentration (mass fraction) on the electroluminescent spectrum, current density, brightness, CIE coordinates of the devices and atomic force microscopy (AFM) characterizations of the emitting layer. With the increase of QDs doping concentration, we find that the QDs luminance intensity of the controlling devices continues to grow. When the QDs doping concentration is 40%, the normal white light emission is obtained in the devices. The CIE coordinates of the white QD-LED are (0.35, 0.32), which are close to the balanced white coordinates. Besides, we also fabricate the non-doped devices, in which the structure is ITO/PEDOT/MEH-PPV/QDs(B)/LiF/Al. After finishing the active layer's preparation, the morphology of the films are investigated by AFM. By comparing the analysis, the doped system has a lower level on the root mean squared roughness. In addition, the doped devices demonstrate a superior performance, and exhibit a low turn-on voltage and a high maximum value of luminance.
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页数:6
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