Strain control of domain-wall stability in epitaxial BiFeO3 (110) films

被引：110
作者：
Cruz, M. P.
Chu, Y. H. [1 ]
Zhang, J. X.
Yang, P. L.
Zavaliche, F.
He, Q.
Shafer, P.
Chen, L. Q.
Ramesh, R.
机构：
[1] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[3] Univ Nacl Autonoma Mexico, Ctr Ciencias Mat Condensada, Mexico City 22800, DF, Mexico
[4] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
来源：
PHYSICAL REVIEW LETTERS | 2007年 / 99卷 / 21期
关键词：
D O I：
10.1103/PhysRevLett.99.217601
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have studied the stability of domains and domain walls in multiferroic BiFeO3 thin films using a combination of piezoelectric force microscopy and phase-field simulations. We have discovered that a film-substrate misfit strain may result in a drastically different thermodynamic stability of two parallel domain walls with the same orientation. A fundamental understanding of the underlying physics, the stress distribution in a domain structure, leads to a novel approach to control the ferroelastic domain stability in the multiferroic BiFeO3 system.
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页数：4
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