The synthesis, micro-structure, spectroscopic, and dielectric properties of SrBi2(Nb1-xAx)2O9 [with A=W, Mo and x=0, 0.025] ceramics were systematically studied. A relative density of 98% was obtained for all the samples using a two-step solid state sintering process. XRD images showed that a single phase layered perovskite structure of SrBi2Nb2O9 (SBN) was formed. The orthorhombic structure with A21am phase group was found up to approximate to 2.5at.% substitution of W and Mo into the SBN matrix. SEM revealed the rod-like grain structure similar to the Maxwell-Wagner (MW) parallel plate capacitor model in SBN ceramic, whereas smaller heterogeneous grain structure was observed in W and Mo donor doped ceramics. The initial high value of real and imaginary part of relative permittivity also indicated the presence of interfacial MW relaxation in the SBN ceramics. The experimental data fit well to the theoretical data obtained from MW polarization model in SBN ceramics. The possible origin of the difference of the properties present in the doped sample has been explained based on grain size, orientation, and modification done in the ceramic matrices.
机构:
Chinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Inorgan Funct Mat & Devices, Shanghai 20050, Peoples R China
Uni Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Inorgan Funct Mat & Devices, Shanghai 20050, Peoples R China
Wu, Ying
Liu, Zhifu
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Chinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Inorgan Funct Mat & Devices, Shanghai 20050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Inorgan Funct Mat & Devices, Shanghai 20050, Peoples R China
Liu, Zhifu
Li, Yongxiang
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Chinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Inorgan Funct Mat & Devices, Shanghai 20050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Inorgan Funct Mat & Devices, Shanghai 20050, Peoples R China
Li, Yongxiang
2015 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP),
2015,
: 465
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