Electronic structure and optical properties of twisted multilayer graphene

被引:32
作者
Vela, Adriana [1 ]
Moutinho, M. V. O. [2 ,3 ]
Culchac, F. J. [1 ]
Venezuela, P. [3 ]
Capaz, Rodrigo B. [1 ]
机构
[1] Univ Fed Rio de Janeiro, Inst Fis, BR-21941972 Rio De Janeiro, RJ, Brazil
[2] Univ Fed Rio de Janeiro, Nucleo Multidisciplinar Pesquisas Comp NUMPEX COM, Campus Duque de Caxias, BR-25245390 Duque De Caxias, RJ, Brazil
[3] Univ Fed Fluminense, Inst Fis, BR-24210346 Niteroi, RJ, Brazil
关键词
VAN-HOVE SINGULARITIES; BILAYER GRAPHENE; SUPERLATTICES; SUPERCONDUCTIVITY; MECHANISM;
D O I
10.1103/PhysRevB.98.155135
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study the electronic and optical properties of twisted trilayer and tetralayer graphene structures using a combination of tight-binding and density-functional theory methods. Band structures, densities of states, and optical absorption spectra are calculated for a variety of layer stackings and twisting angles. Systematic trends of all properties are obtained and compared to the more well known case of twisted bilayer graphene. For trilayer and tetralayer structures, we find, respectively, two and three well-defined absorption peaks in the infrared/visible range that shift with twisting angle, in contrast to the single peak observed in bilayer graphene. In addition, systems containing Bernal-stacked layers present an extra peak in the infrared which is related to transitions between parabolic bands and does not shift with twisting angle. The observed trends may be used to identify the twisting angle and the number of layers in multilayer graphene samples. In particular, magic angles are predicted for the trilayer and tetralayer structures.
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页数:9
相关论文
共 33 条
[11]   Localization of Dirac Electrons in Rotated Graphene Bilayers [J].
de laissardiere, G. Trambly ;
Mayou, D. ;
Magaud, L. .
NANO LETTERS, 2010, 10 (03) :804-808
[12]   Graphene bilayer with a twist: Electronic structure [J].
dos Santos, J. M. B. Lopes ;
Peres, N. M. R. ;
Castro Neto, A. H. .
PHYSICAL REVIEW LETTERS, 2007, 99 (25)
[13]   Intralayer and interlayer electron-phonon interactions in twisted graphene heterostructures [J].
Eliel, G. S. N. ;
Moutinho, M. V. O. ;
Gadelha, A. C. ;
Righi, A. ;
Campos, L. C. ;
Ribeiro, H. B. ;
Chiu, Po-Wen ;
Watanabe, K. ;
Taniguchi, T. ;
Puech, P. ;
Paillet, M. ;
Michel, T. ;
Venezuela, P. ;
Pimenta, M. A. .
NATURE COMMUNICATIONS, 2018, 9
[14]   Magnetic phases near the Van Hove singularity in s- and d-band Hubbard models [J].
Fleck, M ;
Oles, AM ;
Hedin, L .
PHYSICAL REVIEW B, 1997, 56 (06) :3159-3166
[15]   Kohn-Luttinger superconductivity in graphene [J].
Gonzalez, J. .
PHYSICAL REVIEW B, 2008, 78 (20)
[16]  
Han P., 2017, ADV MATER, V29
[17]   Van Hove Singularities and Excitonic Effects in the Optical Conductivity of Twisted Bilayer Graphene [J].
Havener, Robin W. ;
Liang, Yufeng ;
Brown, Lola ;
Yang, Li ;
Park, Jiwoong .
NANO LETTERS, 2014, 14 (06) :3353-3357
[18]   Angle-Resolved Raman Imaging of Inter layer Rotations and Interactions in Twisted Bilayer Graphene [J].
Havener, Robin W. ;
Zhuang, Houlong ;
Brown, Lola ;
Hennig, Richard G. ;
Park, Jiwoong .
NANO LETTERS, 2012, 12 (06) :3162-3167
[19]   Raman Spectroscopy Study of Rotated Double-Layer Graphene: Misorientation-Angle Dependence of Electronic Structure [J].
Kim, Kwanpyo ;
Coh, Sinisa ;
Tan, Liang Z. ;
Regan, William ;
Yuk, Jong Min ;
Chatterjee, Eric ;
Crommie, M. F. ;
Cohen, Marvin L. ;
Louie, Steven G. ;
Zettl, A. .
PHYSICAL REVIEW LETTERS, 2012, 108 (24)
[20]   NEW MECHANISM FOR SUPERCONDUCTIVITY [J].
KOHN, W ;
LUTTINGER, JM .
PHYSICAL REVIEW LETTERS, 1965, 15 (12) :524-+