Inverse spectral theory based optimization of nonlinear optical rectification in semiconductor quantum wells

Using the inverse spectral theory we devise a systematic procedure to generate quantum well profiles optimized in respect to the optical rectification coefficient. Cases that, in course of design, start with an infinite barrier rectangular quantum well allow for a large part of the procedure to be done analytically, and are considered in more detail. Calculations for GaAs based wells indicate that somewhat larger values of the rectification coefficient may be obtained than are reported in current literature. The design procedure may also be extended to the optimization of other optical nonlinearities.