Epitaxial lift-off of MBE grown II-VI heterostructures using a novel MgS release layer

被引：10

作者：

Bradford, C ^{[1
]}

Currran, A ^{[1
]}

Balocchi, A ^{[1
]}

Cavenett, BC ^{[1
]}

Prior, KA ^{[1
]}

Warburton, RJ ^{[1
]}

机构：

[1] Heriot Watt Univ, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期

关键词：

etching; solubility; MBE; quantum wells; sulphides; semiconducting II-VI compounds;

D O I：

10.1016/j.jcrysgro.2005.01.019

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial Lift-Off of ZnSe/ZnCdSe and MgS/ZnCdSe quantum well structures from their GaAs substrate has been achieved by using highly reactive MgS as the sacrificial layer. This technique has proved possible in II-VI semiconductor materials due to the huge contrast in the etch rates between the metastable MgS release layer and the II-VI quantum well materials. In this paper, we outline the epitaxial lift-off technique used and confirm the success of the new method using photoluminescence experiments taken before and after lift-off. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：325 / 328

页数：4

共 3 条

[1] MBE growth and design of II-VI heterostructures for epitaxial lift-off
Davidson, Ian A.
Moug, Richard T.
Vallance, Erin C.
Tamargo, Maria C.
Prior, Kevin A.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 209 (08): : 1428 - 1431
[2] Development of an epitaxial lift-off technology for II-VI nanostructures using ZnMgSSe alloys
Moug, R.
Bradford, C.
Curran, A.
Izdebski, F.
Davidson, I.
Prior, K. A.
Warburton, R. J.
MICROELECTRONICS JOURNAL, 2009, 40 (03) : 530 - 532
[3] Epitaxial lift-off of InGaAs solar cells from InP substrate using a strained AlAs/InAlAs superlattice as a novel sacrificial layer
Chancerel, F.
Regreny, P.
Leclercq, J. L.
Brottet, S.
Volatier, M.
Jaouad, A.
Darnon, M.
Fafard, S.
Blanchar, N. P.
Gendry, M.
Aimez, V.
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2019, 195 : 204 - 212

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