Controllable N-Doping of Graphene

被引:795
作者
Guo, Beidou [1 ,2 ]
Liu, Qian [1 ]
Chen, Erdan [1 ]
Zhu, Hewei [1 ]
Fang, Liang [2 ]
Gong, Jian Ru [1 ]
机构
[1] Natl Ctr Nanosci & Technol, Lab Nanodevices, Beijing 100190, Peoples R China
[2] Chongqing Univ, Dept Appl Phys, Chongqing 400044, Peoples R China
关键词
Graphene N doping; NH3; annealing; ion irradiation; Raman spectroscopy; field effect transistor; CARBON NANOTUBES; RAMAN; SPECTROSCOPY; DEPOSITION; GRAPHITE; BANDGAP;
D O I
10.1021/nl103079j
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Opening and tuning an energy gap in graphene are central to many electronic applications of graphene Here we report N doped graphene obtained by NH3 annealing after N+ ion irradiation of graphene samples First the evolution of the graphene microstucture was investigated following N+ ion irradiation at different fluences using Raman spectroscopy showing that defects were introduced in plane after irradiation and then restored after annealing in N-2 or in NH3 Auger electron spectroscopy (AES) of the graphene annealed in NH3 after irradiation showed N signal however no N signal was observed after annealing in N-2 Last the field effect transistor (FET) was fabricated using N doped graphene and monitored by the source drain conductance and back-gate voltage (G(sd)-V-g) curves in the measurement The transport property changed compared to that of the FET made by intrinsic graphene that is the Dirac point position moved from positive V-g to negative V-g indicating the transition of graphene From p type to n type after annealing in NH3 Our approach which provides a physical mechanism for the introduction of defect and subsequent hetero dopant atoms Into the graphene material in a controllable fashion will be promising for producing graphene based devices for multiple applications
引用
收藏
页码:4975 / 4980
页数:6
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