Issues and Key Technologies for Next Generation 3D NAND

被引：4
|
作者：
Yoon, Chi-Weon [1 ]
Kim, Hyung-Gon [1 ]
Lee, Seon-Kyoo [1 ]
Lee, Jinyub [1 ]
Song, Jai Hyuk [1 ]
机构：
[1] Samsung Elect Co LtD, Dept Flash Prod & Technol, Hwasung, South Korea
来源：
2021 INTERNATIONAL CONFERENCE ON ELECTRONICS, INFORMATION, AND COMMUNICATION (ICEIC) | 2021年
关键词：
3D VNAND; WL Stacks; Cell to Cell Interference; TLC; QLC; Toggle; 4.0/5.0; Frequency Boosting Interface (F-chip);
D O I：
10.1109/ICEIC51217.2021.9369795
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper, design challenges and key technologies to overcome the hurdles for the future 3D NAND are introduced. More specifically, state-of-the-art solutions for higher density, lower cost and higher bandwidth NAND is covered in detail.
引用
收藏
页数：4
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