Characterization of (Ba0.65Sr0.35)(Ti0.65Zr0.35)O3 thin film

被引：11
|
作者：
Byun, JD [1 ]
Yoon, JI [1 ]
Nahm, S [1 ]
Kim, JC [1 ]
机构：
[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea
来源：
MATERIALS RESEARCH BULLETIN | 2000年 / 35卷 / 11期
关键词：
ceramics; chemical synthesis; dielectric properties; electrical properties; ferroelectricity;
D O I：
10.1016/S0025-5408(00)00390-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The crystal structure and dielectric properties of (Ba0.65Sr0.35)(Ti0.65Zr0.35)O-3 (BSTZ) films were investigated. The films were deposited on Pt/Ti/SiO2/Si(100) substrates by metal-organic decomposition (MOD) method and rf magnetron sputtering. The crystal structure of the BSTZ film was cubic perovskite, and the preferred orientation of the film varied with annealing temperature. The MOD film annealed at 750 degreesC exhibited excellent dielectric properties of dielectric constant, k approximate to 1,000 and dissipation factor, tan delta less than or equal to 0.04. The films also showed a very stable leakage current behavior vs. applied field. The leakage current density, J, increased smoothly with field, up to E = 0.3 MV/cm, and was 3.47 X 10(-7) A/cm(2) at 1.25 V. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1755 / 1761
页数：7
相关论文
共 50 条
  • [1] Fabrication and characterization of (111)-epitaxial Pb(Zr0.35Ti0.65)O3/Pb(Zr0.65Ti0.35)O3 artificial superlattice thin films
    Yamada, Tomoaki
    Ebihara, Youhei
    Kiguchi, Takanori
    Sakata, Osami
    Morioka, Hitoshi
    Shimizu, Takao
    Funakubo, Hiroshi
    Konno, Toyohiko J.
    Yoshino, Masahito
    Nagasaki, Takanori
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (10)
  • [2] Sol-gel preparation and characterization of Ba0.65Sr0.35(Ti0.95Sn0.05)O3 thin films
    Hu, Wencheng
    Dong, Dong
    Tang, Xianzhong
    He, Wei
    Liu, Xiaobo
    INTEGRATED FERROELECTRICS, 2007, 92 : 135 - 146
  • [3] Tape casting and its characterization for Sr0.65La0.35Ti0.65Co0.35O3
    Kumar, D
    Upadhyay, S
    Parkash, O
    MATERIALS LETTERS, 1997, 32 (2-3) : 151 - 153
  • [4] Integrated infrared detectors based on (Ba0.65Sr0.35)TiO3 thin films
    Wu, Ch. G.
    Zhang, W. L.
    Li, Y. R.
    Liu, X. Zh.
    Zhu, J.
    Tao, B. W.
    INTEGRATED FERROELECTRICS, 2007, 95 : 26 - 34
  • [5] Study on (Ba0.65Sr0.35)TiO3 ferroelectric thin film prepared by RF magnetron sputtering
    Yadian Yu Shengguang, 2007, 1 (62-64+67):
  • [6] Temperature Dependent Impedance Behavior Of (Ba0.6Sr0.4)(Zr0.65Ti0.35)O3
    Tawade, C. M.
    Sharanappa, Nagbasavanna
    Madolappa, Shivanand
    Sagar, Raghavendra
    Raibagkar, R. L.
    PROCEEDING OF INTERNATIONAL CONFERENCE ON RECENT TRENDS IN APPLIED PHYSICS & MATERIAL SCIENCE (RAM 2013), 2013, 1536 : 563 - +
  • [7] Leakage current characteristics of (Ba0.65Sr0.35) TiO3thin films with Pt electrodes
    He, Xiao-Xiang
    Wu, Chuan-Gui
    Zhang, Wan-Li
    Gongneng Cailiao/Journal of Functional Materials, 2008, 39 (08): : 1298 - 1301
  • [8] In-plane dielectric characterization of epitaxial Ba(Zr0.35Ti0.65)O3 thin films grown on LSAT(001)
    Yun, P.
    Wang, D. Y.
    Wang, Y.
    Chan, H. L. W.
    2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2, 2007, : 222 - +
  • [9] Vinetics of oxygen exchange in Sr(Ti0.65Fe0.35)O3
    Schneider, T
    Wagner, SF
    Menesklou, W
    Ivers-Tiffée, E
    SOLID STATE IONICS-2002, 2003, 756 : 145 - 150
  • [10] Growth of high pyroelectric Ba0.65Sr0.35TiO3 films with Ba0.65Sr0.35RuO3 buffer
    School of Microelectrics and Solid-state Electronics, University of Electronic Science and Technology of China, North Jianshe Road, Chengdu 610054, China
    Zhenkong Kexue yu Jishu Xuebao, 2006, 2 (123-126+149):
12345