Robust picosecond writing of a layered antiferromagnet by staggered spin-orbit fields

被引:59
作者
Roy, P. E. [1 ]
Otxoa, R. M. [1 ]
Wunderlich, J. [1 ,2 ]
机构
[1] Hitachi Cambridge Lab, JJ Thomson Ave, Cambridge CB3 0HE, England
[2] Inst Phys ASCR, Vvi, Cukrovarnicka 10, Prague 16253 6, Czech Republic
关键词
MN2AU; SPINTRONICS;
D O I
10.1103/PhysRevB.94.014439
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ultrafast electrical switching by current-induced staggered spin-orbit fields, with minimal risk of overshoot is shown in layered easy-plane antiferromagnets with basal-plane anisotropies. Reliable switching is due to the fieldlike torque, relaxing stringent requirements with respect to precision in the duration of the excitation pulse. Focus is put on a system with weak planar biaxial anisotropy. We investigate the switching as a function of the spin-orbit field strength, pulse duration, rise and fall times, and damping using atomistic spin dynamics simulations and an effective equation for the antiferromagnetic order parameter. The critical spin-orbit field strength required for switching a biaxial system is determined, and we show that writing is possible at feasible current magnitudes. Finally, we discuss switching of systems exhibiting a dominant uniaxial basal-plane anisotropy.
引用
收藏
页数:5
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