Traveling Wave Model for Frequency Comb Generation in Single-Section Quantum Well Diode Lasers

被引：16

作者：

Dong, Mark ^{[1
]}

Mangan, Niall M. ^{[4
]}

Kutz, J. Nathan ^{[5
]}

Cundiff, Steven T. ^{[2
,3
]}

Winful, Herbert G.

机构：

[1] Univ Michigan, Ann Arbor, MI 48109 USA

[2] Univ Michigan, Fac, Ann Arbor, MI 48109 USA

[3] Univ Michigan, EECS Dept, Ann Arbor, MI 48109 USA

[4] Univ Washington, Appl Math, Seattle, WA 98195 USA

[5] Univ Washington, Seattle, WA 98195 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2017年 / 53卷 / 06期

关键词：

Mathematical model; Semiconductor device modeling; Frequency modulation; Laser mode locking; Diode lasers; Quantum dot lasers; Semiconductor diode lasers; quantum well lasers; mode locked lasers; frequency combs; traveling wave simulations; SEMICONDUCTOR-LASERS; LOCKED LASER; DYNAMICS; GAIN; LOCKING;

D O I：

10.1109/JQE.2017.2756641

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a traveling wave model for a semiconductor diode laser based on quantum wells. The gain model is carefully derived from first principles and implemented with as few phenomenological constants as possible. The transverse energies of the quantum well confined electrons are discretized to automatically capture the effects of spectral and spatial hole burning, the gain asymmetry, and the linewidth enhancement factor. We apply this model to semiconductor optical amplifiers and single-section phase-locked lasers. We are able to reproduce the experimental results. The calculated frequency modulated comb shows potential to be a compact, chip-scale comb source without additional external components.

引用

页数：11

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