Steep Slope Field-Effect Transistors With Ag/TiO2-Based Threshold Switching Device

被引：43

作者：

Song, Jeonghwan ^{[1
]}

Woo, Jiyong ^{[1
]}

Lee, Sangheon ^{[1
]}

Prakash, Amit ^{[1
]}

Yoo, Jongmyung ^{[1
]}

Moon, Kibong ^{[1
]}

Hwang, Hyunsang ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 07期

关键词：

Threshold switching; field-effect transistor; steep slope; subthreshold slope;

D O I：

10.1109/LED.2016.2566661

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we demonstrate a steep slope fieldeffect transistor (FET) using a threshold switching (TS) device. The Ag/TiO2-based TS device reported in our previous work was implemented in series with the drain region of a transistor. Since the TS device has an abrupt transition between the OFF- and ON-states and vice versa, the transistor has a 5-mV/decade subthreshold slope and a high ON/OFF-current ratio (I-ON/I-OFF) of >10(7) with a low drain voltage (0.3 V). Furthermore, the threshold voltage (V-th,V- FET) of the transistor can be tuned by controlling the thickness of the TS device.

引用

页码：932 / 934

页数：3

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