Design of a novel triple reduced surface field LDMOS with partial linear variable doping n-type top layer

被引：7

作者：

Qiao, Ming ^{[1
]}

Li, Chengzhou ^{[1
]}

Liu, Yihe ^{[1
]}

Wang, Yuru ^{[1
]}

Li, Zhaoji ^{[1
]}

Zhang, Bo ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 93卷

基金：

中国国家自然科学基金;

关键词：

Triple RESURF; Breakdown voltage; Specific on-resistance; Partial linear variable doping; N-type top layer; ON-RESISTANCE; RESURF LDMOS; DMOS;

D O I：

10.1016/j.spmi.2016.03.038

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A novel triple reduced surface field (RESURF) lateral double-diffused metal oxide semiconductor field effect transistor (LDMOS) with partial linear variable doping (LVD) N-type top (N-top) layer is proposed in this paper. Compared with the conventional triple RESURF LDMOS, a partial LVD N-top layer is introduced in the surface of N-well, providing a low on-resistance conduction path and leading to an optimized surface electric field, which alleviates the inherent tradeoff between the breakdown voltage (BV) and specific on resistance (R-on,R-sp). With the n-drift region length of 70 mu m, the novel triple RESURF LDMOS obtains a high BV of 847 V and a low R-on,R-sp of 79 m Omega cm(2) which are 76 V higher and 46 m Omega cm(2) lower than those of the conventional triple RESURF LDMOS. Therefore, the novel triple RESURF LDMOS can greatly improve the tradeoff between BV and R-on,R-sp. Furthermore, compared with the other existing technologies in the high BV level, the novel triple RESURF LDMOS can achieve a highest figure of merit (FOM, defined as BV2/R-on,R-sp) of 9.08 MW/cm(2) and the conventional RESURF silicon limits are broken. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：242 / 247

页数：6

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