Laser-plasma synthesis of diamond films

被引：10

作者：

Konov, VI ^{[1
]}

Uglov, SA ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Gen Phys, Moscow 117942, Russia

来源：

QUANTUM ELECTRONICS | 1998年 / 28卷 / 04期

关键词：

D O I：

10.1070/QE1998v028n04ABEH001212

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel technique for plasma synthesis of diamond films (and in future of other materials) with the aid of a stationary optical discharge in flowing mixtures of reactant gases was proposed and experimentally implemented. The use of a cw CO2 laser of 2.5 kW power acting on an Xe-H-2-CH4 gaseous mixture, in an atmospheric-pressure reactor developed for the purpose, made it possible to achieve diamond film deposition rates of 30 - 50 mu m h(-1) on an area of 1 cm(2). The characteristic features and advantages of this laser-plasma deposition technique are discussed.

引用

页码：281 / 282

页数：2