Radiation Response of SiGe BiCMOS Mixed-Signal Circuits Intended for Emerging Lunar Applications

被引：0

作者：

Najafizadeh, Laleh ^{[1
]}

Sutton, Akil K. ^{[1
]}

Jun, Bongim ^{[2
,6
]}

Cressler, John D. ^{[1
]}

Vo, Tuan ^{[3
]}

Momeni, Omeed ^{[3
,7
]}

Mojarradi, Mohammad ^{[3
]}

Ulaganathan, Chandradevi ^{[4
]}

Chen, Suheng ^{[4
]}

Blalock, Benjamin J. ^{[4
]}

Yao, Yuan ^{[5
]}

Yu, Xuefeng ^{[5
]}

Dai, Foster ^{[5
]}

Marshall, Paul W.

Marshall, Cheryl J.

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] Georgia Inst Technol, Atlanta, GA 30332 USA

[3] Jet Prop Lab, Pasadena, CA 91109 USA

[4] Univ Tennessee, Dept Elect & Comp Engn, Knoxville, TN 37996 USA

[5] Auburn Univ, Dept Elect & Comp Engn, Auburn, AL 36849 USA

[6] Spectrolab Inc, Sylmar, CA 91342 USA

[7] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

RADECS 2007: PROCEEDINGS OF THE 9TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS | 2007年

关键词：

About four key words or phrases in alphabetical order; separated by commas;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of proton irradiation on the performance of key devices and mixed-signal circuits fabricated in a SiGe BiCMOS IC design platform and intended for emerging lunar missions are presented. High-voltage (HV) transistors, SiGe bandgap reference (BGR) circuits, a general-purpose high input impedance operational amplifier (op amp), and a 12-bit digital-to-analog converter (DAC) are investigated. The circuits were designed and implemented in a first-generation SiGe BiCMOS technology and were irradiated with 63 MeV protons. The degradation due to proton fluence in each device and circuit was found to be minor, suggesting that SiGe HBT BiCMOS technology could be a robust platform for building electronic components intended for operation under extreme environments.

引用

页码：78 / +

页数：2

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