High-density, large-area single-walled carbon nanotube networks on nanoscale patterned substrates

被引:63
|
作者
Jung, YJ [1 ]
Homma, Y
Ogino, T
Kobayashi, Y
Takagi, D
Wei, BQ
Vajtai, R
Ajayan, PM
机构
[1] Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA
[2] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源
JOURNAL OF PHYSICAL CHEMISTRY B | 2003年 / 107卷 / 28期
关键词
D O I
10.1021/jp0346514
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
High-density single-walled carbon nanotubes forming self-directed networks on nanoscale patterned substrates are produced by chemical vapor deposition. The roles of catalyst particles for the growth of single-walled carbon nanotubes are investigated. Transition-metal particles of 3-7 nm size, obtained by depositing thin catalyst films (0.5-1 nm), remain as active catalysts for the growth of high-density single-walled carbon nanotubes on select catalyst supports (SiO2). Highly organized single-walled carbon nanotube architectures with controlled density can be fabricated following the predefined submicrometer-sized substrate patterns, suggesting the possibility of building nanotube-based molecular-scale electronic devices.
引用
收藏
页码:6859 / 6864
页数:6
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