Non-destructive extraction of technological parameters for numerical simulation of conventional planar punch-through IGBT

Two dimensional (2D) physics-based simulation of power semiconductor devices provides valuable information about the dynamic mechanisms within the devices, thus improving the understanding of device performance in various applications. Numerical simulation requires several technological parameters such as doping, dimensions of various regions and carrier lifetime. Destructive methods are available, but they are quite expensive and require sophisticated equipment. This article describes an original non-destructive technological parameter extraction methodology for conventional planar punch-through (PT) insulated gate bipolar transistor (IGBT) based on simple electrical measurements to obtain an equivalent physics-based model of the real device. To verify the accuracy of these extracted parameters, a 2D PT-IGBT structure is implemented in a physics-based finite element simulator. A good match between simulated and experimental results validates this methodology. (C) 2000 Published by Elsevier Science Ltd. All rights reserved.